NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV42E, BYV42EB series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
≤
0.85 V
I
O(AV)
= 30 A
I
RRM
= 0.2 A
t
rr
≤
28 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV42E / BYV42EB
T
mb
≤
144˚C
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
30
30
150
160
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
square wave
δ
= 0.5; T
mb
≤
108 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
108 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
July 1998
1
Rev 1.200
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
BYV42E, BYV42EB series
MIN.
-
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages,
pcb mounted, minimum footprint,
FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX.
2.4
1.4
-
-
UNIT
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.78
0.95
1.00
0.5
10
6
20
13
1
MAX.
0.85
1.05
1.20
1
100
15
28
22
-
UNIT
V
V
V
mA
µA
nC
ns
ns
V
July 1998
2
Rev 1.200
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
20
PF / W
Vo = 0.705 V
Rs = 0.0097 Ohms
BYV42
Tmb(max) / C
102
D = 1.0
0.5
114
15
0.2
time
VF
10
0.1
126
5
I
t
p
D=
V
VF
time
t
p
T
t
138
fr
T
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.705 V
Rs = 0.0097 Ohms
R
15
BYV42
Tmb(max) / C
114
a = 1.57
1.9
2.2
D.U.T.
Voltage Pulse Source
10
4
2.8
126
Current
shunt
5
138
to ’scope
0
0
5
10
150
15
IF(AV) / A
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
July 1998
3
Rev 1.200
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
trr / ns
1000
100 Qs / nC
IF=20A
10A
5A
2A
1A
10
IF=20A
100
IF=1A
10
1
1
10
dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=20A
1
1
IF=1A
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV42E
10s
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
50
IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
0
0
0.5
VF / V
1.0
1.5
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
July 1998
4
Rev 1.200
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