PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
Rev. 1 — 10 December 2012
Product data sheet
1. Product profile
1.1 General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package
designed to protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
Bidirectional ESD protection of one line
Extremely low diode capacitance C
d
= 0.25 pF
Minimized capacitance variation over voltage
ESD protection up to
10
kV according to IEC 61000-4-2
Ultra small SMD package
1.3 Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
0.20
Typ
-
0.25
Max
5
0.30
Unit
V
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
1
2
1
sym045
Simplified outline
Graphic symbol
2
Transparent
top view
NXP Semiconductors
PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0F1BSF
Description
Version
SOD962
DSN0603-2 leadless ultra small package; 2 terminals;
body 0.6
0.3
0.3 mm
Type number
4. Marking
Table 4.
Marking codes
Marking code
F
Type number
PESD5V0F1BSF
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
T
j
T
amb
T
stg
[1]
Parameter
rated peak pulse power
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1]
[1]
Min
-
-
-
55
65
Max
28
2.2
150
+150
+150
Unit
W
A
C
C
C
Non-repetitive current pulse 8/20
s
exponentially decaying waveform according to IEC61000-4-5.
Table 6.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic
discharge voltage
Conditions
IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
MIL-STD-883 (human body model)
[1]
[1]
Min
-
-
-
Max
10
10
10
Unit
kV
kV
kV
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
Standard
ESD standards compliance
Conditions
> 8 kV (contact)
> 8 kV
IEC 61000-4-2, level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PESD5V0F1BSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 10 December 2012
2 of 12
NXP Semiconductors
PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
CL
V
BR
C
d
r
dyn
[1]
[2]
Parameter
reverse standoff
voltage
reverse leakage
current
clamping voltage
breakdown voltage
diode capacitance
dynamic resistance
Conditions
Min
-
Typ
-
1
-
-
-
0.25
1.3
Max
5
100
10
12.8
10
0.30
-
Unit
V
nA
V
V
V
pF
V
RWM
= 5 V
I
PP
= 0.5 A
I
PPM
= 2.2 A
I
R
= 1 mA
f = 1 MHz; V
R
= 0 V
I
R
= 10 A
[2]
[1]
[1]
-
-
-
6
0.20
-
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD5V0F1BSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 10 December 2012
3 of 12
NXP Semiconductors
PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
1.0
C
d
(pF)
0.8
018aaa061
I
PPM
I
PP
0.6
-V
CL
-V
BR
-V
RWM
0.4
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
0.2
-
+
0.0
0.0
1.0
2.0
3.0
4.0
V
R
(V)
5.0
-I
PP
-I
PPM
006aab325
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
DDD
,
33
9
&/
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig 5.
Dynamic resistance; typical values
PESD5V0F1BSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 10 December 2012
4 of 12
NXP Semiconductors
PESD5V0F1BSF
Extremely low capacitance bidirectional ESD protection diode
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Fig 6.
ESD clamping test setup and waveforms
PESD5V0F1BSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 10 December 2012
5 of 12
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