THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2325ES
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= -10 V
V
GS
= -10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V
V
GS
= -10 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -75 V, R
L
= 150
I
D
-0.5 A, V
GEN
= -10 V, R
g
= 1
f = 1 MHz
V
GS
= -10 V
V
DS
= -75 V, I
D
= -0.5 A
V
GS
= 0 V
V
DS
= -50 V, f = 1 MHz
-
-
-
-
-
-
2.8
-
-
-
-
200
20
17
7.4
1.1
2.9
3.9
8
14
15
10
250
25
22
10
-
-
6.1
12
18
20
14
ns
nC
pF
g
fs
V
DS
= -150 V
V
DS
= -150 V, T
J
= 125 °C
V
DS
= -150 V, T
J
= 175 °C
V
DS
5 V
I
D
= -0.5 A
I
D
= -0.5 A, T
J
= 125 °C
I
D
= -0.5 A, T
J
= 175 °C
-150
-2.5
-
-
-
-
-0.8
-
-
-
-
-
-3
-
-
-
-
-
1.3
-
-
2.2
-
-3.5
± 100
-1
-50
-150
-
1.77
3.4
4.4
-
S
A
μA
V
nA
V
DS
= -15 V, I
D
= -0.5 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= -0.5 A, V
GS
= 0 V
-
-
-
-0.8
-2
-1.2
A
V
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0188-Rev. B, 16-Feb-15
Document Number: 67847
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2325ES
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TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
Vishay Siliconix
1.5
1.6
I
D
- Drain Current (A)
1.2
I
D
- Drain Current (A)
1.2
V
GS
= 10 V thru 5 V
0.9
0.8
0.6
T
C
= 25 °C
0.3
0.4
V
GS
= 4 V
0.0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
T
C
= 125 °C
T
C
= -55 °C
0.0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
3
5
Transfer Characteristics
2
g
fs
- Transconductance (S)
T
C
= 25 °C
2
T
C
= 125 °C
1
R
DS
- On-Resistance (Ω)
T
C
= -55 °C
4
3
2
V
GS
= 6 V
1
V
GS
= 10 V
1
0
0.0
0.3
0.6
0.9
1.2
1.5
I
D
- Drain Current (A)
0
0.0
0.4
0.8
I
D
- Drain Current (A)
1.2
1.6
Transconductance
400
350
V
GS
-
Gate-to-Source
Voltage (V)
8
300
C - Capacitance (pF)
250
200
150
100
50
0
0
10
20
30
40
V
DS
- Drain-to-Source Voltage (V)
50
C
rss
C
oss
0
0
C
iss
10
On-Resistance vs. Drain Current
I
D
= 0.5 A
V
DS
= 75 V
6
4
2
2
4
6
8
Q
g
- Total
Gate
Charge (nC)
10
Capacitance
S15-0188-Rev. B, 16-Feb-15
Gate Charge
Document Number: 67847
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ2325ES
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 0.5 A
2.1
V
GS
= 10 V
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (Ω)
4.0
5.0
Vishay Siliconix
1.7
3.0
1.3
2.0
0.9
1.0
T
J
= 25
°C
T
J
= 150
°C
0.5
- 50 - 25
0.0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
T
J
- Junction Temperature (°C)
V
GS
-
Gate-to-Source
Voltage (V)
On-Resistance vs. Junction Temperature
10
- 150
On-Resistance vs. Gate-to-Source Voltage
I
D
= 250 μA
V
DS
- Drain-to-Source Voltage (V)
1.2
- 160
1
I
S
-
Source
Current (A)
T
J
= 150 °C
- 170
0.1
T
J
= 25 °C
0.01
- 180
- 190
0.001
0.0
0.2
0.4
0.6
0.8
1.0
- 200
- 50 - 25
0
25
50
75
100
125
150
175
V
SD
-
Source-to-Drain
Voltage (V)
T
J
-Junction Temperature (°C)
Source-Drain Diode Forward Voltage
1.3
Drain Source Breakdown vs. Junction Temperature
10
I
DM
Limited
1.0
I
D
- Drain Current (A)
V
GS(th)
- Variance (V)
I
D
= 250 μA
0.7
I
D
= 5 mA
1
Limited by R
DS(on)
*
100 μs
1 ms
10 ms
0.4
0.1
100 ms
1
s
10
s,
DC
T
C
= 25
°C
Single
Pulse
0.001
0.01
BVDSS Limited
0.1
0.01
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
1000
Threshold Voltage
S15-0188-Rev. B, 16-Feb-15
Safe Operating Area
Document Number: 67847
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?67847.
S15-0188-Rev. B, 16-Feb-15
Document Number: 67847
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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