Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A) per leg
Configuration
60
0.020
0.024
23
Dual
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
1
D
2
PowerPAK
®
SO-8L
Dual
D
1
D
2
6
.
15
m
m
1
Top View
13
5.
m
m
4
G
2
Bottom View
2
3
G
1
S
2
1
S
1
G
1
G
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ952EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
S
I
DM
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
23
13
23
93
21
22
25
8.3
-55 to +175
260
UNIT
V
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
85
6
UNIT
°C/W
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. When mounted on 1" square PCB (FR4 material).
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-1221-Rev. A, 21-May-15
Document Number: 62862
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ952EP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5 V
I
D
= 10.3 A
I
D
= 10.3 A, T
J
= 125 °C
I
D
=10.3 A, T
J
= 175 °C
I
D
= 10.3 A
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
MIN.
60
1.5
-
-
-
-
30
-
-
-
-
-
-
V
GS
= 0 V
V
DS
= 30 V, f = 1 MHz
-
-
-
V
GS
= 10 V
V
DS
= 30 V, I
D
= 4.5 A
f = 1 MHz
V
DD
= 30 V, R
L
= 30
I
D
1 A, V
GEN
= 10 V, R
g
= 1
-
-
0.6
-
-
-
-
b
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
-
2.0
-
-
-
-
-
0.012
-
-
0.016
68
1500
130
55
24
5
12
1.3
9
6
25
9
-
0.7
-
2.5
± 100
1
50
150
-
0.020
0.030
0.040
0.024
-
1800
156
66
30
-
-
2.6
12
8
30
12
93
1.1
A
V
ns
nC
pF
S
A
μA
V
nA
TYP.
MAX.
UNIT
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
b
Dynamic
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
V
DS
= 15 V, I
D
= 10.3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain
Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
Source-Drain Diode Ratings and Characteristics
-
I
F
= 10.3 A, V
GS
= 0 V
-
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1221-Rev. A, 21-May-15
Document Number: 62862
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ952EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 4 V
32
Vishay Siliconix
40
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
24
16
V
GS
= 3 V
8
16
T
C
= 25 °C
8
T
C
= 125 °C
T
C
= -55 °C
0
0
2
4
6
8
10
0
V
DS
- Drain-to-Source Voltage (V)
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
10
125
Transfer Characteristics
g
fs
- Transconductance (S)
8
I
D
- Drain Current (A)
100
T
C
= 25 °C
75
T
C
= -55 °C
6
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= -55 °C
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
50
T
C
= 125 °C
25
0
0
3
6
9
12
15
I
D
- Drain Current (A)
Transfer Characteristics
0.05
2000
Transconductance
R
DS(on)
- On-Resistance (Ω)
0.04
C - Capacitance (pF)
1600
C
iss
0.03
1200
0.02
V
GS
= 4.5 V
0.01
V
GS
= 10 V
800
400
C
oss
C
rss
0
0
8
16
24
32
40
I
D
- Drain Current (A)
0
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
60
On-Resistance vs. Drain Current
S15-1221-Rev. A, 21-May-15
Capacitance
Document Number: 62862
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ952EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.5
Vishay Siliconix
I
D
= 4.5 A
V
Ds
= 30 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 10.3 A
2.1
V
GS
= 10 V
1.7
V
GS
= 4.5 V
1.3
6
4
2
0.9
0
0
5
10
15
20
25
30
Q
g
- Total
Gate
Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.15
On-Resistance vs. Junction Temperature
1
R
DS(on)
- On-Resistance (Ω)
10
I
S
-
Source
Current (A)
T
J
= 150 °C
0.12
0.09
0.1
T
J
= 25 °C
0.06
T
J
= 150 °C
0.03
T
J
= 25 °C
0.00
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.6
80
On-Resistance vs. Gate-to-Source Voltage
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
150
175
0.3
V
GS(th)
- Variance (V)
76
0.0
I
D
= 5 mA
- 0.3
I
D
= 250 μA
- 0.6
72
68
- 0.9
64
- 1.2
- 50 - 25
60
0
25
50
75
100
125
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
S15-1221-Rev. A, 21-May-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 62862
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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