THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM120N10-09
www.vishay.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Vishay Siliconix
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 100 V
V
DS
= 100 V, T
J
= 125 °C
V
DS
= 100 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
MIN.
100
2.5
-
-
-
-
120
-
-
-
-
-
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
V
GS
= 10 V
V
DS
= 50 V, I
D
= 85 A
f = 1 MHz
V
DD
= 50 V, R
L
= 0.6
Ω
I
D
≅
85 A, V
GEN
= 10 V, R
g
= 2.5
Ω
-
-
0.25
-
-
-
-
-
I
F
= 85 A, V
GS
= 0
-
TYP.
-
3.0
-
-
-
-
-
0.0079
-
-
99
6915
635
280
120
30
28.5
0.7
21
24
52
16
-
0.9
MAX.
-
3.5
± 100
1
50
150
-
0.0095
0.0190
0.0250
-
8645
795
350
180
-
-
2.3
32
36
78
24
480
1.5
A
V
ns
Ω
nC
pF
S
Ω
A
μA
UNIT
V
nA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
c
b
a
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
V
DS
= 15 V, I
D
= 30 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1875-Rev. C, 10-Aug-15
Document Number: 71515
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM120N10-09
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
175
150
125
100
75
50
25
V
GS
= 4 V
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Vishay Siliconix
120
V
GS
= 10 V thru 6 V
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
80
60
V
GS
= 5 V
40
T
C
= 25 °C
20
T
C
= 125 °C
T
C
= -55 °C
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
0
Output Characteristics
200
0.020
Transfer Characteristics
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
160
0.016
120
0.012
V
GS
= 10 V
0.008
T
C
= 25 °C
T
C
= -55 °C
80
T
C
= 125 °C
40
0.004
0
0
14
28
42
56
70
I
D
- Drain Current (A)
0
0
20
40
60
80
100
120
I
D
- Drain Current (A)
Transconductance
10 000
10
On-Resistance vs. Drain Current
I
D
= 85 A
V
GS
-
Gate-to-Source
Voltage (V)
8000
C - Capacitance (pF)
8
V
DS
= 50 V
6
C
iss
6000
4000
4
2000
C
oss
C
rss
2
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
0
0
20
40
60
80
100
120
Q
g
- Total
Gate
Charge (nC)
Capacitance
S15-1875-Rev. C, 10-Aug-15
Gate Charge
Document Number: 71515
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM120N10-09
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
100
I
D
= 30 A
2.1
I
S
-
Source
Current (A)
10
V
GS
= 10 V
T
J
= 150 °C
1
T
J
= 25 °C
0.1
1.7
1.3
0.9
0.01
0.5
-50
0.001
-25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.05
0.6
R
DS(on)
- On-Resistance (Ω)
0.04
V
GS(th)
Variance (V)
0.2
-0.2
0.03
-0.6
I
D
= 5 mA
0.02
T
J
= 150 °C
-1.0
I
D
= 250 μA
-1.4
0.01
T
J
= 25 °C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
-1.8
-50
-25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
130
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
124
118
112
106
100
-50
-25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S15-1875-Rev. C, 10-Aug-15
Document Number: 71515
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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