RU6581R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 65V/81A,
R
DS (ON)
=7mΩ(Typ.)@V
GS
=10V
•
Super High Dense Cell Design
• Ultra Low On-Resistance
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-220
Applications
•
Switching Application Systems
•
UPS
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
65
±25
175
-55 to 175
T
C
=25°C
81
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
324
②
A
A
W
W
°C/W
81
58
56
①
P
D
R
θJC
③
111
1.35
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
182
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
www.ruichips.com
RU6581R
Electrical Characteristics
Symbol
Parameter
(T
C
=25°C Unless Otherwise Noted)
RU6581R
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
V
GS
=0V, I
DS
=250µA
V
DS
= 65V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
65
1
30
2
3
4
±100
7
9
V
µA
V
nA
mΩ
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=40A, V
GS
=0V
I
SD
=40A, dl
SD
/dt=100A/µs
55
110
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 32V,
Frequency=1.0MHz
1.8
1900
360
150
15
V
DD
=32V, R
L
=0.8Ω,
I
DS
=40A, V
GEN
= 10V,
R
G
=4.7Ω
18
46
32
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=52V, V
GS
= 10V,
I
DS
=40A
58
15
19
nC
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
Pulse width limited by safe operating area.
Limited by T
Jmax
, I
AS
=27A, V
DD
= 48V, R
G
= 50Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
2
www.ruichips.com
RU6581R
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
3
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
I
D
- Drain Current (A)
www.ruichips.com
RU6581R
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
Drain-Source On Resistance
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
R
DS(ON)
- On - Resistance (m)
www.ruichips.com
RU6581R
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
Capacitance
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Gate Charge
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
5
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
www.ruichips.com
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