UNISONIC TECHNOLOGIES CO., LTD
PZT5551
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO
=160V
* High current gain
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
PZT5551L-x-AA3-R
PZT5551G-x-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
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Copyright © 2012 Unisonic Technologies Co., Ltd
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PZT5551
ABSOLUATE MAXIUM RATINGS
(T
A
= 25°C)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
180
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
6
V
DC Collector Current
I
C
600
mA
Power Dissipation
P
C
2
W
Operating Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
62.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100μA, I
E
=0
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10μA, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
Emitter Cut-off Current
I
EBO
V
BE
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
DC Current Gain (Note)
h
FE
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=50mA, I
B
=5mA
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=10mA, f=100MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.25mA, V
CE
=5V
Noise Figure
NF
R
S
=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: P
W
<300μs, Duty Cycle<2%
MIN
180
160
6
TYP
MAX
UNIT
V
V
V
nA
nA
50
50
80
80
80
160
400
0.15
0.2
1
1
300
6.0
8
V
V
MHz
pF
dB
100
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-007,E
PZT5551
Current Gain-Bandwidth Product, f
T
(MHz)
Collector Current, I
C
(mA)
Capacitance, C
OB
(pF)
■
TYPICAL CHARACTERICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage (V)
DC Current Gain, h
FE
www.unisonic.com.tw
NPN SILICON TRANSISTOR
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PZT5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-007,E
Microchip MCU
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