UNISONIC TECHNOLOGIES CO., LTD
USS4450
50V, 5A NPN LOW V
CE(SAT)
TRANSISTOR
DESCRIPTION
The UTC
USS4450
is a NPN transistor with low V
CEsat.
It has
high collector current I
C
, I
CM
performance. This device can be used
in power management applications, such as DC/DC converters,
supply line switching, battery charger and linear voltage regulation
(LDO) and peripheral drivers, such as driver in low supply voltage
applications and inductive load driver.
NPN SILICON TRANSISTOR
FEATURES
* Less heat dissipation due to high efficiency
* Low collector-emitter saturation voltage
* High collector current capability
* High collector current gain under high collector current condition
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
USS4450L-TN3-R
USS4450G-TN3-R
Package
TO-252
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 4
QW-R209-026.A
USS4450
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
SYMBOL
RATINGS
UNIT
V
CBO
60
V
V
CEO
50
V
V
EBO
6
V
DC
I
C
3
A
Collector Current
Peak
I
CM
5
A
Peak Base Current
I
BM
1
A
Power Dissipation (T
C
=25°C) (Note 2)
P
D
1.4
W
Junction Temperature
T
J
150
°C
Operating Temperature
T
OPR
+150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note)
θ
JA
62.5
°C/W
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
For other mounting conditions see “Thermal considerations for TO-252 in the General Part of associated
Handbook”.
ELECTRICAL CHARACTERISTICS
T
A
= 25 °C unless otherwise specified.
PARAMETER
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
SYMBOL
I
CBO
I
EBO
h
FE
TEST CONDITIONS
V
CB
= 50 V, I
E
=0
V
CB
= 50 V, I
E
= 0, T
J
= 150 °C
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
= 500 mA
V
CE
=2V, I
C
= 1 A, (Note 1)
V
CE
=2V, I
C
= 2 A, (Note 1)
I
C
= 500 mA, I
B
=50mA
I
C
= 1 A, I
B
=50mA
I
C
= 2 A, I
B
= 200 mA, (Note 1)
I
C
= 2 A, I
B
= 200 mA, (Note 1)
I
C
= 2 A, I
B
= 200 mA, (Note 1)
V
CE
=2V, I
C
= 1 A, (Note 1)
I
C
= 100 mA, V
CE
= 5 V, f = 100 MHz
V
CB
= 10 V, I
E
=Ie = 0, f = 1 MHz
MIN TYP MAX
100
50
100
200
200
100
90
170
290
110 145
1.2
1.1
100
30
UNIT
nA
μA
nA
Collector-Emitter Saturation voltage
V
CEsat
Equivalent On-Resistance
R
CEsat
Base-Emitter Saturation voltage
V
BEsat
Base-Emitter Turn-On Voltage
V
BEon
Transition Frequency
f
T
Collector Capacitance
C
c
Note 1. Pulse test: t
p
≤300
μs, δ≤0.02.
mV
mV
mV
mΩ
V
V
MHz
pF
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-026.A
USS4450
Collector Current,I
C
(μA)
Collector Current,I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
Collector Current,I
C
(μA)
Collector-Emitter Saturation Voltage,
V
CE(SAT)
(mV)
www.unisonic.com.tw
NPN SILICON TRANSISTOR
3 of 4
QW-R209-026.A
USS4450
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
Emitter-Base Voltage,V
EBO
(V)
Base Current vs.
Emitter-Base Voltage
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R209-026.A
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
