UNISONIC TECHNOLOGIES CO., LTD
6N10
6.5 Amps, 100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
1
TO-252
The UTC
6N10
is an N-Channel enhancement mode power
FET providing customers with excellent switching performance
and minimum on-state resistance.
The UTC
6N10
is generally applied in voltage applications,
such as DC motor control, audio amplifier and high efficiency
switching DC/DC converters.
Power MOSFET
1
TO-252D
FEATURES
* R
DS(ON)
< 0.2Ω @ V
GS
=10V, I
D
=3A
* Fast switching
* Improved dv/dt capability
1
SOT-223
SYMBOL
ORDERING INFORMATION
Package
SOT-223
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
-
6N10G-AA3-R
6N10L-TN3-R
6N10G-TN3-R
6N10L-TND-R
6N10G-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
SOT-223
TO-252 / TO-252D
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-486.E
6N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
±20
V
Continuous
I
D
6.5
A
Continuous Drain Current
Pulsed
I
DM
8.0
A
Repetitive Avalanche Energy
L=0.1mH
E
AR
1.25
mJ
(Duty Cycle
≤1%)
SOT-223
2.2
Power Dissipation
P
D
W
TO-252/TO-252D
16
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
UNIT
°C/W
°C/W
thermal
PARAMETER
SYMBOL
RATINGS
SOT-223
55
Junction to Ambient
θ
JA
TO-252/TO-252D
100
SOT-223
12
Junction to Case
θ
JC
TO-252/TO-252D
7.5
Note:
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case
reference is defined as the solder mounting surface of the drain pins.
θ
JC
is guaranteed by design while
θ
JA
is determined by the user’s board deign.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-486.E
6N10
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
I
D(on)
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, T
J
=125°C
V
DS
=100V, V
GS
=0V, T
J
=150°C
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=5V, V
GS
=10V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=3A
V
GS
=10V, I
D
=3A, T
J
=125°C
V
GS
=10V, I
D
=3A, T
J
=150°C
V
GS
=4.5V, I
D
=1.0A
V
DS
=15V, I
D
=3A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
On-State Drain Current (Note 2)
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 2)
Power MOSFET
MIN
100
TYP
MAX UNIT
V
µA
µA
µA
nA
nA
A
V
Ω
S
pF
pF
pF
58
60
178
82
75
ns
ns
ns
ns
nC
nC
nC
A
V
ns
1
50
250
+100
-100
8.0
1.0
3.0
0.150 0.200
0.350
0.450
0.160 0.225
8.5
320
80
17
28
30
148
52
27
2.4
6.8
Forward Transconductance (Note 2)
g
FS
DYNAMIC PARAMETERS
(Note1)
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note3)
t
D(ON)
Rise Time (Note 3)
t
R
V
DD
=30V, R
L
=7.5Ω, I
D
=0.5A,
V
GEN
=10V, R
G
=25
Ω
Turn-OFF Delay Time (Note 3)
t
D(OFF)
Fall-Time (Note 3)
t
F
Total Gate Charge (Note 3)
Q
G
V
DS
=50V, V
GS
=10V, I
D
=1.3A
Gate to Source Charge (Note 3)
Q
GS
I
G
=100µA
Gate to Drain Charge (Note 3)
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(T
C
=25°C)
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage (Note 2)
V
SD
I
F
=6.5A, V
GS
=0V
Reverse Recovery Time
t
RR
I
F
=6.5A, di/dt=100A/µs
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse test; pulse width
≤300 ≤μs,
duty cycle
≤2%.
3. Independent of operating temperature.
8.0
0.9
35
1.3
60
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-486.E
6N10
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
300
250
200
150
100
50
0
0
20
80 100 120
40
60
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.5
1
2
1.5
2.5
Gate Threshold Voltage, V
TH
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Coutinuous Drain-Soarce Current, I
SD
(A)
Drain Current, I
D
(A)
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QW-R502-486.E
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