UNISONIC TECHNOLOGIES CO., LTD
4N40
4A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N40
is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
4N40
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* R
DS(ON)
<1.5Ω @ V
GS
=10V, I
D
=2A
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-251
TO-251S
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
4N40L-TA3-T
4N40G-TA3-T
4N40L-TF3-T
4N40G-TF3-T
4N40L-TM3-T
4N40G-TM3-T
4N40L-TMS-T
4N40G-TMS-T
4N40L-TN3-R
4N40G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-550.D
4N40
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-550.D
4N40
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
4
A
Drain Current
Pulsed (Note 1)
I
DM
8
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
140
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
60
W
TO-220
Power Dissipation
TO-220F
27
W
TO-251/TO-251S/TO-252
52
W
P
D
TO-220
0.48
W/°C
Derate above 25°C
TO-220F
0.22
W/°C
TO-251/TO-252
0.41
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=18mH, I
AS
=4A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
2.08
4.5
2.4
UNIT
°C/W
°C/W
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-251/TO-251S/TO-252
TO-220
Junction to Case
TO-220F
TO-251/TO-251S/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-550.D
4N40
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=400V, V
GS
=0V
V
DS
=320V, T
C
=125°С
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
Power MOSFET
MIN TYP MAX
400
UNI
T
V
1
µA
100 µA
+100 nA
-100 nA
4.0
1.8
315
120
40
30
60
100
68
18.5
4.5
5.5
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
(Note 2, 3)
Fall-Time
t
F
Total Gate Charge
Q
G
V
DD
=50V, I
D
=1.3A, V
GS
=10V, I
G
=100µA
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=4A, V
GS
=0V, dI
F
/dt=100A/µs(Note 2)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
3. Essentially independent of operating temperature
2.0
30
1.4
800
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QW-R502-550.D
4N40
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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