N-CHANNEL POWER MOSFET
2N80_15 | 2N80G-TM3-R | 2N80L-TM3-R | 2N80G-TND-R | 2N80L-TND-R | |
---|---|---|---|---|---|
描述 | N-CHANNEL POWER MOSFET | 2A, 800V N-CHANNEL POWER MOSFET | 2A, 800V N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET | N-CHANNEL POWER MOSFET |
厂商名称 | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
包装说明 | - | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | TO-252D, 3/2 PIN | TO-252D, 3/2 PIN |
Reach Compliance Code | - | compli | compli | compli | compli |
雪崩能效等级(Eas) | - | 180 mJ | 180 mJ | 180 mJ | 180 mJ |
配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | - | 800 V | 800 V | 800 V | 800 V |
最大漏极电流 (ID) | - | 2.4 A | 2.4 A | 2.4 A | 2.4 A |
最大漏源导通电阻 | - | 6.3 Ω | 6.3 Ω | 6.3 Ω | 6.3 Ω |
FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | - | 9 pF | 9 pF | 9 pF | 9 pF |
JEDEC-95代码 | - | TO-251 | TO-251 | TO-252 | TO-252 |
JESD-30 代码 | - | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | - | 1 | 1 | 1 | 1 |
端子数量 | - | 3 | 3 | 2 | 2 |
工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | - | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | - | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | - | 43 W | 43 W | 43 W | 43 W |
最大脉冲漏极电流 (IDM) | - | 9.6 A | 9.6 A | 9.6 A | 9.6 A |
表面贴装 | - | NO | NO | YES | YES |
端子形式 | - | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING |
端子位置 | - | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | - | SILICON | SILICON | SILICON | SILICON |
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