UNISONIC TECHNOLOGIES CO., LTD
1N65A
0.5A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
1N65A
is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
<15.5Ω@ V
GS
= 10V, I
D
= 0.5A
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (C
RSS
= 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
SOT-223
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Box
Bulk
Ordering Number
Lead Free
Halogen Free
-
1N65AG-AA3-R
1N65AL-T92-B
1N65AG-T92-B
1N65AL-T92-K
1N65AG-T92-K
Note: Pin Assignment: G: Gate D: Drain S: Source
1N65AG-AA3-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AA3: SOT-223, T92: TO-92
(3) G: Halogen Free and Lead Free, L: Lead Free
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QW-R502-584.C
1N65A
MARKING
SOT-223
UTC
1N65A
1
Power MOSFET
TO-92
L: Lead Free
G: Halogen Free
Data Code
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1N65A
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°C, unless otherwise specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
0.5
A
Pulsed Drain Current (Note 2)
I
DM
2
A
Avalanche Energy
Single Pulse(Note 3)
E
AS
50
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
1
W
Power Dissipation (T
C
=25°C)
P
D
Derate above 25°C
8
mW/°C
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, I
AS
=0.8A, V
DD
=50V, R
G
=0Ω, Starting T
J
=25°C
4. I
SD
≤1.0A,
di/dt≤100A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
SYMBOL
SOT-223
TO-92
θ
JA
RATINGS
150
140
UNIT
°C/W
°C/W
Junction to Ambient
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QW-R502-584.C
1N65A
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified.)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
650
V
V
DS
= 650V, V
GS
= 0V
10
μA
100 nA
Forward
V
GS
= 20V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250mA,referenced to 25°C
0.4
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 0.5A
11.5 15.5
Ω
DYNAMIC CHARACTERISTICS
100 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
20
pF
f=1MHz
Reverse Transfer Capacitance
C
RSS
3
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
12
34
ns
Turn-On Rise Time
t
R
11
32
ns
V
DD
=325V, I
D
=0.5A,
R
G
=5Ω (Note 1,2)
Turn-Off Delay Time
t
D (OFF)
40
90
ns
Turn-Off Fall Time
t
F
18
46
ns
Total Gate Charge
Q
G
8
10
nC
V
DS
=520V, V
GS
=10V,
Gate-Source Charge
Q
GS
1.8
nC
I
D
=0.8A (Note 1,2)
Gate-Drain Charge
Q
GD
4.0
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
SD
= 1.2A
1.6
V
Maximum Continuous Drain-Source Diode
I
S
1.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
4.8
A
Forward Current
136
ns
Reverse Recovery Time
t
rr
V
GS
=0V, I
SD
= 1.2A
di/dt = 100A/μs
Reverse Recovery Charge
Q
RR
0.3
μC
Note: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature
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QW-R502-584.C
1N65A
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-584.C
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