UNISONIC TECHNOLOGIES CO., LTD
UF3N25Z
3A, 250V N-CHANNEL
POWER MOSFET
Power MOSFET
1
DESCRIPTION
SOT-223
The UTC
UF3N25Z
is an N-channel enhancement mode
Power MOSFET using UTC’ s advanced technology to provide
customers with a minimum on-state resistance, low gate charge
and superior switching performance.
1
FEATURES
TO-252
* R
DS(ON)
<2Ω @ V
GS
=10V
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested
1
TO-251
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UF3N25ZL-AA3-R
UF3N25ZG-AA3-R
SOT-223
UF3N25ZL-TM3-T
UF3N25ZG-TM3-T
TO-251
UF3N25ZL-TN3-R
UF3N25ZG-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
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UF3N25Z
MARKING INFORMATION
PACKAGE
MARKING
Power MOSFET
SOT-223
TO-251
TO-252
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UF3N25Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
250
V
Gate-Source Voltage
V
GSS
±20
V
3
A
Continuous
I
D
Continuous Drain Current
Pulsed
I
DM
12
A
Avalanche Energy
E
AS
52
mJ
SOT-223
0.8
W
Power Dissipation
P
D
TO-251/TO-252
1.14
W
Junction Temperature
T
J
+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
250
1
10
-10
2
4
2
190
80
30
3.2 5.5
0.64
1.6
30
35
118 125
50
58
90 110
3
12
1.3
V
µA
µA
µA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=250V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DD
=50V, I
D
=1.3A, I
G
=100µA,
Gate to Source Charge
Q
GS
V
GS
=10V
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω,
V
GS
=0~10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=3A
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UF3N25Z
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
250
200
150
100
50
0
Drain Current vs. Gate Threshold Voltage
300
V
DS
=V
GS
250
200
150
100
50
0
0
0
60
120
180
240
300
0.7
1.4
2.1
2.8
3.5
4.2
Drain-Source Breakdown Voltage, BV
DSS
(V)
Gate Threshold Voltage, V
TH
(V)
Drain-Source On-State Resistance
Characteristics
0.6
0.5
Drain Current, I
D
(A)
0
0.1
0.2 0.3
0.4
0.5
Drain to Source Voltage, V
DS
(V)
0.6
0.4
0.3
0.2
0.1
0
V
GS
=10V
Drain Current vs. Source to Drain Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Drain Current, I
D
(A)
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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