UNISONIC TECHNOLOGIES CO., LTD
6N60-P
6A, 600V N-CHANNEL POWER
MOSFET
DESCRIPTION
1
TO-220F1
1
TO-220F2
1
TO-220
Power MOSFET
1
TO-220F
The UTC
6N60-P
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
1
TO-263
1
TO-251
* R
DS(ON)
< 1.75Ω @ V
GS
= 10V, I
D
= 3A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
1
TO-252
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
6N60L-TA3-T
6N60G-TA3-T
6N60L-TF1-T
6N60G-TF1-T
6N60L-TF2-T
6N60G-TF2-T
6N60L-TF3-T
6N60G-TF3-T
6N60L-TM3-T
6N60G-TM3-T
6N60L-TN3-R
6N60G-TN3-R
6N60L-TQ2-T
6N60G-TQ2-T
6N60L-TQ2-R
6N60G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-969.C
6N60-P
MARKING
Power MOSFET
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QW-R502-969.C
6N60-P
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6
A
Continuous Drain Current
I
D
6
A
Pulsed Drain Current (Note 2)
I
DM
24
A
Single Pulsed (Note 3)
E
AS
260
mJ
Avalanche Energy
13
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.0
ns
TO-220/TO-263
125
W
TO-220F/TO-220F1
40
W
Power Dissipation
P
D
TO-220F2
42
W
TO-251/TO-252
55
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62.5
110
1.0
3.2
2.97
2.27
UNIT
°C/W
PARAMETER
TO-220/TO-220F2
TO-220F/TO-220F1
Junction to Ambient
TO-263
TO-251/TO-252
TO-220/TO-263
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
θ
JC
°C/W
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QW-R502-969.C
6N60-P
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
600
V
V
DS
= 600V, V
GS
= 0V
10
μA
Forward
V
GS
= 30V, V
DS
= 0V
100 nA
Gate- Source Leakage Current
I
GSS
-100 nA
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3A
1.2 1.75
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
751
pF
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
89
pF
17
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
25
nC
V
DS
=50V, I
D
=1.3A, V
GS
=10 V
Gate-Source Charge
Q
GS
4.9
nC
(Note 1, 2)
9.4
nC
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
60
ns
Turn-On Rise Time
t
R
80
ns
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
I
G
= 100μA (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
230
ns
Turn-Off Fall Time
t
F
90
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
6
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24
A
Forward Current
Reverse Recovery Time
t
rr
290
ns
V
GS
= 0 V, I
S
= 6 A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
3.0
μC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
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QW-R502-969.C
6N60-P
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-969.C
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