UNISONIC TECHNOLOGIES CO., LTD
25N20
25A, 200V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC
25N20
is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.
Power MOSFET
FEATURES
* R
DS(ON)
< 160 mΩ @ V
GS
=10V, I
D
=16A
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant
SYMBOL
ORDERING INFORMATION
Package
TO-220F
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
Ordering Number
Lead Free
Halogen Free
25N20L-TF3-T
25N20G-TF3-T
25N20L-TF1-T
25N20G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-A84.D
25N20
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
V
DSS
200
V
Gate Source Voltage
V
GSS
±20
V
Continuous Drain Current
T
C
=25°C
I
D
25
A
(V
GS
=10V)
I
D
15.86
A
T
C
= 100°C
Pulsed Drain Current (Note 2)
I
DM
80
A
Total Power Dissipation
P
D
50
W
(T
C
=25°C)
Operating Junction Temperature
T
J
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.5
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
MIN
200
0.14
1
100
±100
2
112
14
4
160
TYP MAX UNIT
V
V/°C
µA
µA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
∆BV
DSS
/∆T
J
Reference to 25°C , I
D
=1mA
I
DSS
V
DS
=100V, V
GS
=0V, T
J
=25°C
V
DS
=80V, V
GS
=0V,T
J
=150°C
V
GS
=±20V
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance (Note)
R
DS(ON)
V
GS
=10V, I
D
=16A
Forward Transconductance
g
FS
V
DS
=10V, I
D
=16A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
1
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25mΩ,
V
GS
=10V, R
D
=3.125Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge (Note)
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
V
SD
I
S
=25A, V
GS
=0V
Reverse Recovery Time
t
RR
I
S
=25A,V
GS
=0V,
dI/dt=100A/µs
Reverse Recovery Charge
Q
RR
Note: Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%.
1000 1700
240
25
56
75
240
100
35
8
9.7
40
1.3
90
380
UNISONIC TECHNOLOGIES CO., LTD
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2 of 5
QW-R502-A84.D
25N20
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-A84.D
25N20
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
Power MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
D.U.T.
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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4 of 5
QW-R502-A84.D
25N20
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
Drain Current, I
D
(µA)
250
200
150
100
50
0
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
200
150
100
50
0
0
0
40
80
120 160 200 240
Drain-Source Breakdown Voltage, BV
DSS
(V)
2
4
5
1
3
Gate Threshold Voltage, V
TH
(V)
Drain Current, I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(A)
5 of 5
QW-R502-A84.D
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