UNISONIC TECHNOLOGIES CO., LTD
6N70K-MTQ
6.0A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
6N70K-MTQ
is an N-channel mode power
MOSFET using UTC’s advanced technology to provide
customers with a minimum on-state resistance, high switching
speed, low gate charge and low input capacitance.
The UTC
6N70K-MTQ
is universally applied in high
efficiency switch mode power supply.
FEATURES
* R
DS(ON)
<2.4Ω @ V
GS
=10V, I
D
= 3 A
* High switching speed
SYMBOL
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QW-R205-051.B
6N70K-MTQ
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Ordering Number
Lead Free
Halogen Free
6N70KL-TA3-T
6N70KG-TA3-T
6N70KL-TF3-T
6N70KG-TF3-T
6N70KL-TF1-T
6N70KG-TF1-T
6N70KL-TF2-T
6N70KG-TF2-T
6N70KL-TF3-T
6N70KG-TF3-T
6N70KL-TM3-T
6N70KG-TM3-T
6N70KL-TMS-T
6N70KG-TMS-T
6N70KL-TMS2-T
6N70KG-TMS2-T
6N70KL-TMS4-T
6N70KG-TMS4-T
6N70KL-TN3-R
6N70KG-TN3-R
6N70KL-TND-R
6N70KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
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QW-R205-051.B
6N70K-MTQ
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
dv/dt
RATINGS
700
±30
6
24
6
75
2.5
125
UNIT
V
V
A
A
A
mJ
V/ns
Drain-Source Voltage
Gate-Source Voltage (Note 2)
Continuous T
C
=25°C
Drain Current
Pulsed
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F/TO-220F1
42
TO-220F2/TO-220F3
Power Dissipation
W
TO-251/TO-251S
TO-251S2/TO-251S4
55
TO-252/TO-252D
P
D
TO-220
1
TO-220F
0.32
TO-220F1/TO-220F2
0.336
Linear Derarting Factor
W/°C
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
0.44
TO-252/TO-252D
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5mH, I
AS
= 5.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤140A/µs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F
TO-220F1/TO-220F2
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL
RATINGS
62.5
θ
JA
110
3.1
1.0
θ
JC
2.9
2.27
°С/W
°С/W
UNIT
Junction to Ambient
Junction to Case
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QW-R205-051.B
6N70K-MTQ
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Power MOSFET
MIN
700
TYP MAX UNIT
V
0.79
V/°C
1
µA
250 µA
+100 nA
-100 nA
4.0
2.4
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
6
24
1.4
A
A
V
BV
DSS
I
D
=250µA, V
GS
=0V
∆BV
DSS
/∆T
J
I
D
=250µA
V
DS
=700V, V
GS
=0V
I
DSS
V
DS
=560V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz (Note 1, 2)
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
V
GS
=10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V,
I
D
=1.3A, I
G
=100µA
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Integral reverse pn-diode in
Maximum Body-Diode Pulsed Current
the MOSFET
I
SM
(Note 3)
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V, T
J
= 25°C
(Note 2)
Notes: 1. Pulse Test: Pulse width
≤
250µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
2.0
2.0
480
65
7.5
70
61
140
41
45
7
7
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QW-R205-051.B
6N70K-MTQ
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
300nF
V
DS
3mA
Gate Charge Test Circuit
V
DS
R
G
R
D
90%
Gate Charge Waveforms
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
V
DS
R
G
I
D
BV
DSS
L
I
AS
Resistive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R205-051.B
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