CY7C261
CY7C263/CY7C264
8K x 8 Power-Switched and Reprogrammable PROM
Features
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (commercial)
— 25 ns (military)
• Low power
— 660 mW (commercial)
— 770 mW (military)
• Super low standby power (7C261)
— Less than 220 mW when deselected
•
•
•
•
•
•
— Fast access: 20 ns
EPROM technology 100% programmable
Slim 300-mil or standard 600-mil packaging available
5V
±
10% V
CC
, commercial and military
Capable of withstanding greater than 2001V static dis-
charge
TTL-compatible I/O
Direct replacement for bipolar PROMs
Functional Description
The CY7C261, CY7C263, and CY7C264 are high-perfor-
mance 8192-word by 8-bit CMOS PROMs. When deselected,
the 7C261 automatically powers down into a low-power stand-
by mode. It is packaged in a 300-mil-wide package. The 7C263
and 7C264 are packaged in 300-mil-wide and 600-mil-wide
packages respectively, and do not power down when deselect-
ed. The reprogrammable packages are equipped with an era-
sure window; when exposed to UV light, these PROMs are
erased and can then be reprogrammed. The memory cells uti-
lize proven EPROM floating-gate technology and byte-wide in-
telligent programming algorithms.
The CY7C261, CY7C263, and CY7C264 are plug-in replace-
ments for bipolar devices and offer the advantages of lower
power, superior performance and programming yield. The
EPROM cell requires only 12.5V for the supervoltage and low
current requirements allow for gang programming. The
EPROM cells allow for each memory location to be tested
100%, as each location is written into, erased, and repeatedly
exercised prior to encapsulation. Each PROM is also tested for
AC performance to guarantee that after customer program-
ming the product will meet DC and AC specification limits.
Read is accomplished by placing an active LOW signal on CS.
The contents of the memory location addressed by the ad-
dress line (A
0
−A
12
) will become available on the output lines
(O
0
−O
7
).
Logic Block Diagram
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
O
1
POWER DOWN
(7C261)
COLUMN
ADDRESS
O
3
ADDRESS
DECODER
O
4
O
5
ROW
ADDRESS
PROGRAM–
MABLE
ARRAY
COLUMN
MULTI–
PLEXER
O
7
Pin Configurations
DIP/Flatpack
Top View
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8 7C261 17
7C263
9 7C264 16
10
15
11
14
12
13
V
CC
A
8
A
9
A
10
CS
A
11
A
12
O
7
O
6
O
5
O
4
O
3
O
6
LCC/PLCC (OpaqueOnly)
Top View
4 3 2 1 28 27 26
25
5
24
6
23
7C261
7
22
8
7C263
21
9
20
10
19
11
12 1314151617 18
O1
O2
GND
NC
O3
O4
O5
A5
A6
A7
NC
VCC
A8
A9
A
4
A
3
A
2
A
1
A
0
NC
O
0
A
10
CS
A
11
A
12
NC
O
7
O
6
O
2
O
0
CS
For an 8K x 8 Registered PROM, see theCY7C265.
Cypress Semiconductor Corporation
Document #: 38-04010 Rev. **
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised March 4, 2002
CY7C261
CY7C263/CY7C264
Selection Guide
7C261-20
7C263-20
7C264-20
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Maximum Standby
Current (mA)
(7C261 only)
Commercial
Military
Commercial
Military
40
20
120
7C261-25
7C263-25
7C264-25
25
120
140
40
40
7C261-35
7C263-35
7C264-35
35
100
120
30
30
7C261-45
7C263-45
7C264-45
45
100
120
30
30
7C261-55
7C263-55
7C264-55
55
100
120
30
30
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperatures .................................–65°C to+150°C
Ambient Temperature with
Power Applied..............................................–55°C to+125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12) ............................................ –0.5V to+7.0V
DC Voltage Applied to Outputs
in High Z State ................................................ –0.5V to+7.0V
DC Input Voltage........................................... –3.0V to + 7.0V
DC Program Voltage
(Pin 19 DIP, Pin 23 LCC) ..............................................13.0V
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
UV Exposure ................................................ 7258 Wsec/cm
2
Operating Range
Range
Commercial
Industrial
Military
[2]
[1]
Ambient
Temperature
0
°
C to + 70
°
C
–40
°
C to + 85
°
C
–55
°
C to + 125
°
C
V
CC
5V
±
10%
5V
±
10%
5V
±
10%
Notes:
1. See the Ordering Information section regarding industrial temperature
range specification.
2. T
A
is the “instant on” case temperature.
Document #: 38-04010 Rev. **
Page 2 of 16
CY7C261
CY7C263/CY7C264
]]
Electrical Characteristics
Over the Operating Range
[3,4]
7C261-20, 25
7C263-20, 25
7C264-20, 25
Parameter
V
OH
V
OH
V
OL
V
OL
V
IH
V
IL
I
IX
V
CD
I
OZ
I
OS
I
CC
Description
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Level
Input LOW Level
Input Current
Input Diode Clamp Voltage
Output Leakage Current
Output Short Circuit Current
Power Supply Current
[5]
7C261-35, 45, 55
7C263-35, 45, 55
7C264-35, 45, 55
Min.
2.4
Max.
Unit
V
V
V
0.4
V
V
0.8
–10
Note 4
–10
–40
–20
+10
+40
–90
100
120
30
30
12
4.75
13
50
0.4
V
mA
V
V
mA
µA
µA
mA
mA
+10
V
µA
Test Conditions
V
CC
= Min., I
OH
= –2.0 mA
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8 mA
(6 mA Mil)
V
CC
= Min., I
OL
= 16 mA
Min.
2.4
Max.
0.4
2.0
0.8
GND < V
IN
< V
CC
GND <V
OUT
< V
CC
Output Disabled
Com’l
Mil
Com’l
Mil
Com’l
Mil
12
4.75
0.4
–10
–10
–40
–20
+10
+10
+40
–90
120
140
40
40
13
50
Note 4
2.0
V
CC
= Max., V
OUT
= GND
V
CC
= Max.,
f = Max.
I
OUT
= 0 mA
V
CC
= Max.,
CS > V
IH
I
SB
V
PP
I
PP
V
IHP
V
ILP
Standby Supply Current (7C261)
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
Notes:
3. See the last page of this specification for Group A subgroup testing information.
4. See the “Introduction to CMOS PROMs” section of the Cypress Data Book for general information on testing.
5. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.]
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
10
10
Unit
pF
pF
Document #: 38-04010 Rev. **
Page 3 of 16
CY7C261
CY7C263/CY7C264
AC Test Loads and Waveforms
[4]
Test Load for -20 through -30 speeds
R1 500
(658
Ω
MIL)
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
R2 333
Ω
(403
Ω
MIL)
5 pF
INCLUDING
JIG AND
SCOPE
R2 333
Ω
(403
Ω
MIL)
R1 500
Ω
(658
Ω
MIL)
3.0V
GND
90%
10%
90%
10%
≤
5 ns
≤
5 ns
(a) Normal Load
Equivalent to:
(b) High Z Load
THÉVENIN EQUIVALENT
R
TH
200
Ω
(250
Ω
MIL)
OUTPUT
2.0V(1.9VMIL)
Test Load for -35 through -55 speeds
R1250
Ω
5V
OUTPUT
30pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
R2167
Ω
5 pF
INCLUDING
JIG AND
SCOPE
R2167
Ω
R1 250
Ω
(c) Normal Load
Equivalent to:
THÉ VENIN EQUIVALENT
R
TH
100
Ω
2.0V
(d) High Z Load
OUTPUT
Switching Characteristics
Over the Operating Range
[2,3,4
]
7C261-20
7C263-20
7C264-20
Parameter
t
AA
t
HZCS1
t
HZCS2
t
ACS1
t
ACS2
t
PU
t
PD
Description
Address to Output Valid
Chip Select Inactive to High Z
(7C263 and 7C264)
Chip Select Inactive to High Z
(7C261)
Chip Select Active to Output Valid
(7C263 and 7C264)
Chip Select Active to Output Valid
(7C261)
Chip Select Active to Power-Up
(7C261)
Chip Select Inactive to
Power-Down (7C261)
0
20
Min.
Max.
20
12
20
12
20
0
25
7C261-25
7C263-25
7C264-25
Min.
Max.
25
12
25
12
25
0
35
7C261-35
7C263-35
7C264-35
Min.
35
20
35
20
35
0
45
7C261-45
7C263-45
7C264-45
Max.
45
30
45
30
45
0
55
7C261-55
7C263-55
7C264-55
Min.
Max.
55
35
55
35
55
Unit
ns
ns
ns
ns
ns
ns
ns
Max. Min.
Document #: 38-04010 Rev. **
Page 4 of 16
CY7C261
CY7C263/CY7C264
Switching Waveforms
[4]
t
PD
50%
t
PU
50%
V
CC
SUPPLY
CURRENT
A
0
- A
12
ADDRESS
CS
t
AA
O
0
- O
7
t
HZCS
t
ACS
Erasure Characteristics
Wavelengths of light less than 4000 angstroms begin to erase
the devices in the windowed package. For this reason, an
opaque label should be placed over the window if the PROM
is exposed to sunlight or fluorescent lighting for extended pe-
riods of time.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 angstroms for a minimum dose (UV inten-
sity multiplied by exposure time) of 25 Wsec/cm
2
. For an ultra-
violet lamp with a 12 mW/cm
2
power rating, the exposure time would
be approximately 35 minutes. The 7C261 or 7C263 needs to
be within 1 inch of the lamp during erasure. Permanent dam-
age may result if the PROM is exposed to high-intensity UV
light for an extended period of time. 7258 Wsec/cm
2
is the
recommended maximum dosage.
Operating Modes
Read
Read is the normal operating mode for programmed device. In
this mode, all signals are normal TTL levels. The PROM is
addressed with a 13-bit field, a chip select, (active LOW), is
applied to the CS pin, and the contents of the addressed location
appear on the data out pins.
Program, Program Inhibit, Program Verify
These modes are entered by placing a high voltage V
PP
on pin
19, with pins 18 and 20 set to V
ILP
. In this state, pin 21 becomes a
latch signal, allowing the upper 5 address bits to be latched into an
onboard register, pin 22 becomes an active LOW program (PGM)
signal and pin 23 becomes an active LOW verify (VFY) signal. Pins
22 and 23 should never be active LOW at the same time. The PRO-
GRAM mode exists when PGM is LOW, and VFY is HIGH. The verify
mode exists when the reverse is true, PGM HIGH and VFY LOW and
the program inhibit mode is entered with both PGM and VFY HIGH.
Program inhibit is specifically provided to allow data to be placed on
and removed from the data pins without conflict
Table 1. Mode Selection
Pin Function
[6, 7]
Read or Output Disable
Mode
Read
Output Disable
Program
Program Inhibit
Program Verify
Blank Check
Program
A
12
NA
A
12
A
12
V
ILP
V
ILP
V
ILP
V
ILP
A
11
V
PP
A
11
A
11
V
PP
V
PP
V
PP
V
PP
A
10
LATCH
A
10
A
10
V
ILP
V
ILP
V
ILP
V
ILP
A
9
PGM
A
9
A
9
V
ILP
V
IHP
V
IHP
V
IHP
A
8
VFY
A
8
A
8
V
IHP
V
IHP
V
ILP
V
ILP
CS
CS
V
IL
V
IH
V
ILP
V
ILP
V
ILP
V
ILP
O
7
–O
0
D
7
–D
0
O
7
–O
0
High Z
D
7
–D
0
High Z
O
7
–O
0
O
7
–O
0
Notes:
6. X = “don’t care” but not to exceed V
CC
±
5%.
7. Addresses A
8
-A
12
must be latched through lines A
0
-A
4
in programming modes.
Document #: 38-04010 Rev. **
Page 5 of 16
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