a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
f. Surface mounted on 1" x 1" FR4 board with full copper.
g. Maximum under steady state conditions is 100 °C/W.
h. Surface mounted on 1" x 1" FR4 board with minimum copper.
i. Maximum under steady state conditions is 190 °C/W.
S15-1510-Rev. B, 29-Jun-15
Document Number: 63683
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1
m
m
4
D
Bump
Side
View
Si8466EDB
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 2.5 V, I
D
= 1 A
V
GS
= 1.5 V, I
D
= 1 A
V
GS
= 1.2 V, I
D
= 0.5 A
V
DS
= 4 V, I
D
= 2 A
MIN.
8
-
-
0.35
-
-
-
10
-
-
-
-
-
-
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
-
-
-
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 0.1 V, f = 1 MHz
V
DD
= 4 V, R
L
= 2
Ω
I
D
≅
2 A, V
GEN
= 4.5 V, R
g
= 1
Ω
-
-
-
-
-
-
-
TYP.
-
3.5
-3
-
-
-
-
-
0.035
0.037
0.045
0.055
30
710
270
192
8.5
0.9
1.6
6
10
15
40
10
MAX.
-
-
-
0.7
±3
1
10
-
0.043
0.046
0.060
0.090
-
-
-
-
13
-
-
-
20
30
80
20
ns
Ω
nC
pF
S
Ω
UNIT
V
mV/°C
V
μA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
R
DS(on)
Forward
Transconductance
a
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
A
= 25 °C
-
-
-
-
0.7
30
7
15
15
1.5
20
1.2
60
15
-
-
A
V
ns
nC
ns
I
S
= 1.5 A, V
GS
= 0
-
-
-
-
-
I
F
= 2 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1510-Rev. B, 29-Jun-15
Document Number: 63683
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8466EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
10
-1
10
-2
16
I
GSS
-
Gate
Current (mA)
10
-3
I
GSS
-
Gate
Current (A)
12
10
-4
10
-5
10
-6
10
-7
10
-8
0
0
3
6
9
12
15
V
GS
-
Gate-Source
Voltage (V)
10
-9
0
3
6
9
12
V
GS
-
Gate-to-Source
Voltage (V)
15
T
J
= 150
°C
Vishay Siliconix
T
J
= 25
°C
T
J
= 25
°C
8
4
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
S15-1510-Rev. B, 29-Jun-15
Document Number: 63683
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8466EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 1.5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
Vishay Siliconix
12
12
T
C
= 25
°C
8
T
C
= 125
°C
4
8
4
V
GS
= 1 V
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.4
0.8
1.2
1.6
V
GS
-
Gate-to-Source
Voltage (V)
2.0
Output Characteristics
Transfer Characteristics
0.120
V
GS
= 1.2 V
0.100
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1200
1000
C
iss
0.080
800
0.060
V
GS
= 2.5 V
0.040
V
GS
= 4.5 V
V
GS
= 1.5 V
600
C
oss
400
C
rss
200
0.020
0.000
0
0
4
8
12
I
D
- Drain Current (A)
16
20
0
2
4
6
V
DS
- Drain-to-Source Voltage (V)
8
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
R
DS(on)
- On-Resistance (Normalized)
1.4
V
GS
= 4.5 V, 2.5 V, 1.5 V, I
D
= 2 A
V
GS
-
Gate-to-Source
Voltage (V)
4
I
D
= 2 A
1.3
V
DS
= 4 V
1.2
3
V
DS
= 2 V
2
1.1
V
GS
= 1.2 V, I
D
= 0.5 A
1.0
V
DS
= 6.4 V
1
0.9
0
0
2
4
6
8
Q
g
- Total
Gate
Charge (nC)
10
0.8
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
S15-1510-Rev. B, 29-Jun-15
On-Resistance vs. Junction Temperature
Document Number: 63683
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8466EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.120
Vishay Siliconix
0.100
I
D
= 2 A
I
S
-
Source
Current (A)
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.080
0.060
T
J
= 125
°C
0.040
T
J
= 25
°C
0.020
T
J
= 25
°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Source-Drain Diode Forward Voltage
0.8
On-Resistance vs. Gate-to-Source Voltage
25
0.7
20
Power (W)
125
150
0.6
V
GS(th)
(V)
15
0.5
I
D
= 250 μA
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1 ms
1
10 ms
100 ms
10
s,
1s
DC
T
A
= 25
°C
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
0.1
0.01
Safe Operating Area, Junction-to-Ambient
S15-1510-Rev. B, 29-Jun-15
Document Number: 63683
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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