SIGC57T120R3E
IGBT3 Power Chip
Features:
1200V Trench & Field Stop technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
This chip is used for:
power modules
C
Applications:
drives
G
E
Chip Type
SIGC57T120R3E
V
CE
1200V
I
C
50A
Die Size
7.6 x 7.53 mm
2
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
7.6 x 7.53
4x(2.98 x 2.97)
mm
1.319 x 0.820
57.2
140
200
458
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
µm
mm
2
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7667M, L7667T, L7667E, Rev 2.3, 02.07.2014
SIGC57T120R3E
Maximum Ratings
Parameter
Collector-Emitter voltage,
T
vj
=25
C
DC collector current, limited by
T
vj max
Pulsed collector current,
t
p
limited by
T
vj max
Gate emitter voltage
Junction temperature range
Operating junction temperature
Short circuit data
2 )
V
GE
= 15V,
V
CC
= 900V,
T
vj
= 125°C
Reverse bias safe operating area
2 )
(RBSOA)
1)
2)
Symbol
V
CE
I
C
I
c, puls
V
GE
T
vj
T
vj
t
SC
Value
1200
1)
Unit
V
A
A
V
°C
C
µs
150
20
-55 ... +175
-55...+150
10
I
C , m a x
= 100A,
V
C E , m a x
= 1200V
T
vj
125 °C
depending on thermal properties of assembly
not subject to production test - verified by design/characterization
Static Characteristic
(tested on wafer),
T
vj
=25
C
Value
Parameter
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
Symbol
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
r
G
Conditions
min.
V
GE
=0V ,
I
C
= 2mA
V
GE
=15V,
I
C
=50A
I
C
=2mA ,
V
GE
=V
CE
V
CE
=1200V ,
V
GE
=0V
V
CE
=0V ,
V
GE
=20V
4
1200
1.4
5.0
1.7
5.8
2.1
6.5
6.79
600
µA
nA
V
typ.
max.
Unit
Dynamic Characteristic
(not subject to production test - verified by design / characterization),
T
vj
=25
C
Parameter
Input capacitance
Reverse transfer capacitance
Symbol
C
ies
C
res
Conditions
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
163
Value
min.
typ.
3600
pF
max.
Unit
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7667M, L7667T, L7667E, Rev 2.3, 02.07.2014
SIGC57T120R3E
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7667M, L7667T, L7667E, Rev 2.3, 02.07.2014
SIGC57T120R3E
Chip Drawing
E
E
G
T
E
E
E =
Emitter
G
= Gate
T
= Test pad do not contact
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7667M, L7667T, L7667E, Rev 2.3, 02.07.2014
SIGC57T120R3E
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
2.2
2.3
Subjects (major changes since last revision)
Change wafer size to 200 mm
Additional basic types L7667M, L7667T, L7667E; new gate pad design
Date
30.04.2010
02.07.2014
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7667M, L7667T, L7667E, Rev 2.3, 02.07.2014
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