Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel-2
30
30
R
DS(on)
(Ω)
0.020 at V
GS
= 10 V
0.025 at V
GS
= 4.5 V
0.020 at V
GS
= 10 V
0.025 at V
GS
= 4.5 V
I
D
(A)
a, e
Q
g
(Typ.)
8.0
8.0
8.0
8.0
7.3
7.3
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT
®
Plus Schottky
• PWM Optimized
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.51 V at 1.0 A
I
F
(A)
a
2.0
APPLICATIONS
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
D
1
D
2
SO-8
S
1
/D
2
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4830CDY-T1-E3 (Lead (Pb)-free)
Si4830CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
S
1
/D
2
S
1
/D
2
G
1
G
2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
P
D
T
J
, T
stg
Channel-1
30
± 20
8.0
e
7.1
7.5
b, c
5.8
b, c
30
2.6
1.8
b, c
30
10
5
2.9
1.8
2
b, c
1.2
b, c
- 55 to 150
Channel-2
30
± 20
8.0
e
7.1
7.5
b, c
5.8
b, c
30
2.6
1.8
b, c
30
10
5
2.9
1.8
2
b, c
1.2
b, c
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 s
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Steady State
35
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Symbol
R
thJA
R
thJF
Channel-1
Typ.
Max.
52
62.5
43
Channel-2
Typ.
Max.
52
62.5
35
43
Unit
°C/W
www.vishay.com
1
Si4830CDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 8 A
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 5 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.2
0.2
950
950
155
185
65
65
16.5
16.5
7.3
7.3
2.7
2.7
2.1
2.1
1.2
1.2
2.4
2.4
Ω
25
25
11
11
nC
pF
g
fs
V
DS
= 15 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 8 A
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
0.0156
0.0156
0.019
0.019
29
29
0.020
0.020
0.025
0.025
S
Ω
1.1
0.016
1
1
30
30
32
-6
3
3
100
100
0.001
0.10
0.025
10
A
mA
V
mV/°C
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Si4830CDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 1 A
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
a
9
10
11
10
18
18
8
9
17
17
12
12
18
19
10
10
Max.
18
20
20
20
35
35
16
18
35
35
24
24
35
35
20
20
2.6
2.6
30
30
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.74
0.46
17
17
9
7
10
9
7
8
1.1
0.51
34
34
18
14
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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