VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
FEATURES
Base
cathode
2
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
D
2
PAK
1
N/C
3
Anode
• Guard ring for enhanced ruggedness and
long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D
2
PAK
10 A
35 V, 40 V, 45 V
0.57 V
15 mA at 125 °C
175 °C
Single die
13 mJ
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-10TQ...SPbF Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
10
35/45
1050
0.49
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-10TQ035SPbF
35
VS-10TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 151 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
10
1050
A
280
13
2
mJ
A
UNITS
A
Revision: 21-May-14
Document Number: 94121
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
10 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
20 A
10 A
20 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.57
0.67
0.49
0.61
2
15
900
8.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style D
2
PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to +175
2.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
10TQ045S
UNITS
°C
Mounting torque
Marking device
Revision: 21-May-14
Document Number: 94121
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
0.01
0.001
0.0001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0
5
10
15
20
25
30
35
40
45
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
P
DM
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
.
100
0.1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 21-May-14
Document Number: 94121
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com
180
8
Vishay Semiconductors
7
6
5
4
3
2
1
DC
RMS limit
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
Allowable Case Temperature (°C)
175
170
165
DC
160
Average Power Loss (W)
10TQ
R
thJC
(DC) = 2.0 °C/W
155
0
5
10
15
0
0
5
10
15
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition and
with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 21-May-14
Document Number: 94121
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TQ035SPbF, VS-10TQ045SPbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
10
2
T
3
Q
4
045
5
S
6
TRL PbF
7
8
Vishay Semiconductors product
Current rating (10 A)
Circuit configuration: T = D
2
PAK
Schottky “Q” series
Voltage ratings
S = D
2
PAK
None = tube (50 pieces)
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
035 = 35 V
045 = 45 V
8
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95014
www.vishay.com/doc?95008
www.vishay.com/doc?95032
Revision: 21-May-14
Document Number: 94121
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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