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VSIB660-E3-45

产品描述2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小93KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VSIB660-E3-45概述

2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

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New Product
VSIB620 thru VSIB680
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
6.0 A
200 V to 800 V
180 A
10 µA
0.95 V
150 °C
~
~
~
~
Case Style GSIB-5S
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
MECHANICAL DATA
Case:
GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 100 °C
T
A
= 25 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
VSIB620
200
140
200
VSIB640
400
280
400
6.0
(1)
2.8
(2)
180
120
- 55 to + 150
VSIB660
600
420
600
VSIB680
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave superimposed
on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number: 84656
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

VSIB660-E3-45相似产品对比

VSIB660-E3-45 VSIB620 VSIB620_08 VSIB640 VSIB660 VSIB680
描述 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
是否Rohs认证 - 不符合 - 不符合 不符合 不符合
包装说明 - R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
针数 - 4 - 4 4 4
制造商包装代码 - CASE GSIB-5S - CASE GSIB-5S CASE GSIB-5S CASE GSIB-5S
Reach Compliance Code - unknow - unknow unknow unknow
其他特性 - UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
外壳连接 - ISOLATED - ISOLATED ISOLATED ISOLATED
配置 - BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 - SILICON - SILICON SILICON SILICON
二极管类型 - BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 - R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609代码 - e0 - e0 e0 e0
最大非重复峰值正向电流 - 180 A - 180 A 180 A 180 A
元件数量 - 4 - 4 4 4
相数 - 1 - 1 1 1
端子数量 - 4 - 4 4 4
最高工作温度 - 150 °C - 150 °C 150 °C 150 °C
最低工作温度 - -55 °C - -55 °C -55 °C -55 °C
最大输出电流 - 2.8 A - 2.8 A 2.8 A 2.8 A
封装主体材料 - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 - Not Qualified - Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 - 200 V - 400 V 600 V 800 V
表面贴装 - NO - NO NO NO
端子面层 - TIN LEAD - TIN LEAD TIN LEAD TIN LEAD
端子形式 - THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 - SINGLE - SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

 
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