< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800HC-90R
I
C ················································································
800A
V
CES ······································································
4500V
1-element in a pack
Insulated type
LPT-IGBT / Soft Recovery Diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
December 2012
HVM-1065-B
1
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CRM
I
E
I
ERM
P
tot
V
iso
V
e
T
j
T
jop
T
stg
t
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Maximum power dissipation
(Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
V
GE
= 0V, T
j
= -40…+125°C
V
GE
= 0V, T
j
=
−50°C
V
CE
= 0V, T
j
= 25°C
DC, T
c
= 85°C
Pulse
(Note 1)
DC
Pulse
(Note 1)
T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
PD
≤
10 pC
Ratings
4500
4400
± 20
800
1600
800
1600
8300
6000
3500
−50
~ +150
−50
~ +125
−55
~ +125
10
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
s
V
CC
= 3200V, V
CE
≤
V
CES
, V
GE
=15V, T
j
=125°C
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
G
V
CEsat
t
d(on)
t
r
E
on(10%)
E
on
t
d(off)
t
f
E
off(10%)
E
off
Item
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
(Note 5)
(Note 5)
Conditions
V
CE
= V
CES
, V
GE
= 0V
V
CE
= 10 V, I
C
= 80 mA, T
j
= 25°C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
V
CE
= 10 V, V
GE
= 0 V, f = 100 kHz
T
j
= 25°C
V
CC
= 2800V, I
C
= 800A, V
GE
=
±15V,
T
j
= 25°C
I
C
= 800 A
(Note 4)
T
j
= 25°C
V
GE
= 15 V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
CC
= 2800 V
T
j
= 25°C
I
C
= 800 A
V
GE
= ±15 V
T
j
= 125°C
R
G(on)
= 4.0
Ω
T
j
= 25°C
L
s
= 150 nH
T
j
= 125°C
Inductive load
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
CC
= 2800 V
T
j
= 25°C
I
C
= 800 A
T
j
= 125°C
V
GE
= ±15 V
R
G(off)
= 15
Ω
T
j
= 25°C
L
s
= 150 nH
T
j
= 125°C
Inductive load
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Note 6)
(Note 6)
Min
—
—
5.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
10.0
6.3
—
117.0
7.3
3.3
9.0
3.50
4.40
1.00
0.95
0.28
0.30
2.90
3.55
3.10
3.80
3.60
3.80
0.35
0.45
1.95
2.55
2.15
2.85
Max
10.0
—
6.8
0.5
—
—
—
—
—
5.10
—
1.50
—
0.50
—
—
—
—
—
5.00
—
1.00
—
—
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
J
µs
µs
J
J
December 2012
2
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
V
EC
t
rr
I
rr
Q
rr
E
rec(10%)
E
rec
Item
Emitter-collector voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Reverse recovery energy
(Note 2)
Conditions
I
E
= 800 A
(Note 4)
V
GE
= 0 V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
(Note 2)
(Note 6)
V
CC
= 2800 V
I
C
= 800 A
V
GE
= ±15 V
R
G(on)
= 4.0
Ω
L
s
= 150 nH
Inductive load
Min
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
2.50
2.80
0.70
0.90
780
850
660
1000
0.85
1.35
1.00
1.55
Max
—
3.40
—
—
—
—
—
—
—
—
—
—
Unit
V
µs
A
µC
J
J
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to heat sink,
grease
= 1W/m
·
k, D
(c-s)
= 100m
Min
—
—
—
Limits
Typ
—
—
9.0
Max
15.0
28.5
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
r
g
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
Limits
Typ
—
—
—
0.9
—
—
—
16.5
0.18
2.5
Max
22.0
6.0
3.0
—
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Ω
T
C
= 25°C
T
C
= 25°C
Note1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD
i
).
3. Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012
3
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1600
T
j
= 25°C
V
GE
= 13V
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
V
CE
= V
GE
1200
V
GE
= 16V
V
GE
= 15V
V
GE
= 11V
1200
Collector Current [A]
800
V
GE
= 10V
Collector Current [A]
800
400
400
T
j
= 125°C
T
j
= 25°C
0
0
2
4
6
8
0
0
4
8
12
16
Collector - Emitter Voltage [V]
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1600
V
GE
= 15V
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
1600
1200
Collector Current [A]
T
j
= 25°C
1200
T
j
= 25°C
T
j
= 125°C
Emitter Current [A]
T
j
= 125°C
800
800
400
400
0
0
2
4
6
8
0
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
Emitter-Collector Voltage [V]
December 2012
4
< HVIGBT MODULES >
CM800HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
15
V
CE
= 2800V, I
C
= 800A
T
j
= 25°C
Gate-Emitter Voltage [V]
C
ies
10
5
0
-5
-10
-15
Capacitance [nF]
100
10
C
oes
V
GE
= 0V, Tj = 25°C
f = 100kHz
C
res
1
0.1
1
10
100
0
2
4
6
8
10
Collector-Emitter Voltage [V]
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
10
V
CC
= 2800V, V
GE
= ±15V
R
G(on)
= 4.0Ω, R
G(off)
= 15Ω
L
S
= 150nH, Tj = 125°C
E
on
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
V
CC
= 2800V, I
C
= 800A
V
GE
= ±15V, L
S
= 150nH
Tj = 125°C, Inductive load
8
Inductive load
Switching Energies [J]
6
E
of f
Switching Energies [J]
6
E
on
4
4
E
rec
2
2
E
rec
0
0
400
800
1200
1600
0
2
4
Collector Current [A]
Gate resistor [Ohm]
6
8
10
December 2012
5
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