CM300DX1-24NFJ
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
NX-Series Module
300 Amperes/1200 Volts
A
D
E
J
F
G
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
J
Y
(4 PLACES)
AD
AE
AF
Q
ST
R
S T
Q
U
48
K
U
47
24
Z
23
AA B
AB
DETAIL "B"
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
AG
AC (4 PLACES)
AL
AM
C
AR
AS
AJ
AH
W
V
X
M
L
K
N
DETAIL "A"
K
P
L
AK
AT
AU
AW
G2(38)
Es2(39)
C2E1(24) C2E1(23)
AV
Tr2
Di2
Di1
Tr1
Cs1(22)
Es1(16)
G1(15)
NC(2)
E2
(47)
C1
(48)
NC(1)
AP
AN
AQ
DETAIL "A"
AX
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF
±0.5
DETAIL "B"
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz for
hard switching applications and
60 to 70 kHz for soft switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
Motion/Servo Control
£
Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM300DX1-24NFJ is a 1200V
(V
CES
), 300 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
300
V
CES
Volts (x 50)
24
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
07/11 Rev. 0
5.98
152.0
2.44
62.0
0.67+0.04/-0.02 17.0+1.0/-0.5
5.39
137.0
4.79
121.7
4.33±0.02
110.0±0.5
3.89
99.0
3.72
94.5
0.53
13.5
0.15
3.81
0.28
7.25
0.30
7.75
1.95
49.53
0.9
22.86
0.55
14.0
0.87
22.0
0.67
17.0
0.48
12.0
0.24
6.0
0.16
4.2
0.37
6.5
0.83
21.14
M6
M6
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
1.53
39.0
1.97±0.02
50.0±0.5
2.26
57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.02 17.0+1.0/-0.5
0.51
13.0
0.27
7.0
0.03
0.8
0.81
20.5
0.12
3.0
0.14
3.5
0.21
5.4
0.49
12.5
0.15
3.81
0.05
1.15
0.025
0.65
0.29
7.4
0.05
1.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06
1.5
0.49
12.5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM300DX1-24NFJ
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (G-E Short-circuited)
Gate-Emitter Voltage (C-E Short-circuited)
Collector Current (Operation)
*4
Collector Current (Pulse)
*3
Total Power Dissipation (T
C
= 25°C)
*2,*4
Emitter Current (Operation)
*4
Emitter Current (Pulse)
*3
Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T
C
) and heatsink temperature (T
f
) measured point is just under the chips.
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
*1
I
ERM
*1
T
j
T
stg
V
ISO
Rating
1200
±20
300
600
1890
300
600
-40 to 150
-40 to 125
2500
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
°C
°C
V
rms
0
16.2
47
Di2
Di2
Tr2
24
29.8
48
Tr2
Di1
Tr1
Di1
Tr1
23
27.2
38.9
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
LABEL SIDE
92.8 80.5
42.1
28.6
0
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi
*3 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
*4 Junction temperature (T
j
) should not increase beyond maximum junction temperature (T
j(max)
) rating.
2
07/11 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM300DX1-24NFJ
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Electrical and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Internal Lead Resistance
Internal Gate Resistance
External Gate Resistance
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
*1
t
rr
*1
Q
rr
*1
R
CC' + EE'
r
g
R
G
I
E
= 300A, V
GE
= 0V, T
j
= 25°C
*5
I
E
= 300A, V
GE
= 0V, T
j
= 125°C
*5
V
CC
= 600V, I
E
= 300A, V
GE
=
±15V,
R
G
= 1.0Ω, Inductive Load
Main Terminals-Chip,
Per Switch,T
C
= 25°C
*2
T
C
= 25°C, per Switch
*2
T
C
= 125°C, per Switch
*2
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T
C
) and heatsink temperature (T
f
) measured point is just under the chips.
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V, T
j
= 25°C
*5
I
C
= 300A, V
GE
= 15V, T
j
= 125°C
*5
V
CE
= 10V , V
GE
= 0V
V
CC
= 600V, I
C
= 300A, V
GE
= 15V
V
CC
= 600V, I
C
= 300A,
V
GE
=
±15V,
R
G
= 1.0Ω,
Inductive Load
Min.
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.56
1.12
1.0
Typ.
—
—
6.0
5.0
5.0
—
—
—
1360
—
—
—
—
5.0
3.0
—
6.5
—
0.8
1.6
—
Max.
1
1
7.5
6.5
—
47
5.6
1.1
—
300
80
500
150
6.5
—
150
—
—
1.04
2.08
10
Units
mA
µA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
ns
µC
mΩ
Ω
Ω
Ω
0
16.2
47
Di2
Di2
Tr2
24
29.8
48
Tr2
Di1
Tr1
Di1
Tr1
23
27.2
38.9
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
LABEL SIDE
92.8 80.5
42.1
28.6
0
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
07/11 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM300DX1-24NFJ
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
(Case to Heatsink)
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-s)
Test Conditions
Per IGBT Part
*2
Per FWDi Part
*2
Per 1 Module
*2,*6
Thermal Grease Applied
Min.
—
—
—
Typ.
—
—
0.015
Max.
0.066
0.093
—
Units
K/W
K/W
K/W
Mechanical Characteristics
Characteristics
Mounting Torque
Weight
Flatness of Baseplate
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Symbol
M
t
M
s
m
e
c
0
Test Conditions
Main Terminals, M6 Screw
Mounting to Heatsink, M5 Screw
On Centerline X, Y
*7
Min.
31
22
—
±0
Typ.
35
27
330
—
Max.
40
31
—
±100
Units
in-lb
in-lb
Grams
µm
*2 Case temperature (T
C
) and heatsink temperature (T
f
) measured point is just under the chips.
16.2
47
Di2
Di2
Tr2
24
29.8
48
Tr2
Di1
Tr1
Di1
Tr1
23
27.2
38.9
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
LABEL SIDE
92.8 80.5
42.1
28.6
0
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi
*6 Typical value is measured by using thermally conductive grease of
λ
= 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
– : CONCAVE
+ : CONVEX
Y
MOUNTING
SIDE
X
MOUNTING SIDE
MOUNTING SIDE
– : CONCAVE
+ : CONVEX
4
07/11 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM300DX1-24NFJ
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
600
COLLECTOR CURRENT, I
C
, (AMPERES)
500
400
300
200
100
0
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25°C
V
GE
= 20V
15
10
13
8
6
4
2
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
0
T
j
= 25°C
I
C
= 600A
I
C
= 300A
11
I
C
= 120A
10
9
0
2
4
6
8
10
0
100
200
300
400
500
600
6
8
10
12
14
16
18
20
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
2
T
j
= 25°C
T
j
= 125°C
C
ies
10
3
t
f
t
d(off)
t
d(on)
10
1
C
oes
10
2
SWITCHING TIME, (ns)
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.0Ω
T
j
= 125°C
Inductive Load
10
2
10
0
C
res
10
1
0
2
4
6
8
10
-1
10
-1
V
GE
= 0V
10
0
10
1
10
2
10
1
t
r
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. VGE
(TYPICAL)
10
3
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
REVERSE RECOVERY, I
rr
(A), t
rr
(ns)
SWITCHING TIME, (ns)
V
CC
= 600V
V
GE
= ±15V
I
C
= 300A
T
j
= 125°C
Inductive Load
t
d(on)
10
3
I
rr
t
rr
20
I
C
= 300A
V
CC
= 600V
t
d(off)
15
10
2
t
r
10
2
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.0Ω
T
j
= 125°C
Inductive Load
10
t
f
5
10
1
10
-1
10
0
GATE RESISTANCE, R
G
, (Ω)
10
1
10
1
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
400
800
1200
1600
2000
GATE CHARGE, Q
G
, (nC)
07/11 Rev. 0
5
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