NCP2890, NCV2890
1.0 Watt Audio Power
Amplifier
The NCP2890 is an audio power amplifier designed for portable
communication device applications such as mobile phone
applications. The NCP2890 is capable of delivering 1.0 W of
continuous average power to an 8.0
W
BTL load from a 5.0 V power
supply, and 320 mW to a 4.0
W
BTL load from a 2.6 V power supply.
The NCP2890 provides high quality audio while requiring few
external components and minimal power consumption. It features a
low−power consumption shutdown mode, which is achieved by
driving the SHUTDOWN pin with logic low.
The NCP2890 contains circuitry to prevent from “pop and click”
noise that would otherwise occur during turn−on and turn−off
transitions.
For maximum flexibility, the NCP2890 provides an externally
controlled gain (with resistors), as well as an externally controlled
turn−on time (with the bypass capacitor).
Due to its excellent PSRR, it can be directly connected to the
battery, saving the use of an LDO.
This device is available in a 9−Pin Flip−Chip CSP (standard
Tin−Lead and Lead−Free versions) and a Micro8t package.
Features
http://onsemi.com
MARKING
DIAGRAMS
9−Pin Flip−Chip CSP
FC SUFFIX
CASE 499E
A3
1
XXX
AYWWG
A1
8
C1
8
1
Micro8
DM SUFFIX
CASE 846A
1
XXX
A, R
Y
WW, W
G
XXX
RYWG
G
•
•
•
•
•
•
•
•
•
•
•
•
1.0 W to an 8.0
W
BTL Load from a 5.0 V Power Supply
Excellent PSRR: Direct Connection to the Battery
“Pop and Click” Noise Protection Circuit
Ultra Low Current Shutdown Mode
2.2 V−5.5 V Operation
External Gain Configuration Capability
External Turn−on Time Configuration Capability
Up to 1.0 nF Capacitive Load Driving Capability
Thermal Overload Protection Circuitry
AEC−Q100 Qualified Part Available
Pb−Free Packages are Available
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
= Specific Device Code,
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN CONNECTIONS
9−Pin Flip−Chip CSP
A1
INM
B1
VM_P
C1
BYPASS
A2
OUTA
B2
VM
C2
A3
INP
B3
V
p
C3
OUTB SHUTDOWN
(Top View)
Micro8
Typical Applications
•
Portable Electronic Devices
•
PDAs
•
Wireless Phones
SHUTDOWN
BYPASS
INP
INM
1
2
3
4
(Top View)
8
7
6
5
OUTB
VM
V
p
OUTA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
November, 2006 − Rev. 10
Publication Order Number:
NCP2890/D
NCP2890, NCV2890
Rf
20 kW
Cs
Ci
390 nF
Ri
20 kW
V
p
1
mF
AUDIO
INPUT
INM
INP
V
p
300 kW
BYPASS
−
+
V
p
OUTA
R1
20 kW
R2
20 kW
OUTB
8W
−
+
C
bypass
1
mF
300 kW
SHUTDOWN
SHUTDOWN
CONTROL
VM
VIH
VIL
VM_P
Figure 1. Typical Audio Amplifier Application Circuit with Single Ended Input
Rf
20 kW
Cs
Ci
+
390 nF
AUDIO
INPUT
−
390 nF
20 kW
20 kW
C
bypass
Rf
1
mF
300 kW
BYPASS
300 kW
SHUTDOWN
VIH
VIL
VM_P
SHUTDOWN
CONTROL
VM
−
+
Ci
20 kW
Ri
V
p
INM
INP
−
+
V
p
OUTA
R1
20 kW
R2
20 kW
OUTB
Ri
V
p
1
mF
8W
Figure 2. Typical Audio Amplifier Application Circuit with a Differential Input
This device contains 671 active transistors and 1899 MOS gates.
http://onsemi.com
2
NCP2890, NCV2890
PIN DESCRIPTION
9−Pin Flip−Chip
CSP
A1
A2
A3
B1
B2
B3
C1
C2
C3
Micro8
4
5
3
NA
7
6
2
8
1
Type
I
O
I
I
I
I
I
O
I
Symbol
INM
OUTA
INP
VM_P
VM
V
p
BYPASS
OUTB
SHUTDOWN
Description
Negative input of the first amplifier, receives the audio input signal. Connected to
the feedback resistor R
f
and to the input resistor R
in
.
Negative output of the NCP2890. Connected to the load and to the feedback
resistor Rf.
Positive input of the first amplifier, receives the common mode voltage.
Power Analog Ground.
Core Analog Ground.
Positive analog supply of the cell. Range: 2.2 V−5.5 V.
Bypass capacitor pin which provides the common mode voltage (Vp/2).
Positive output of the NCP2890. Connected to the load.
The device enters in shutdown mode when a low level is applied on this pin.
MAXIMUM RATINGS
(Note 1)
Rating
Supply Voltage
Operating Supply Voltage
Input Voltage
Max Output Current
Power Dissipation (Note 2)
Operating Ambient Temperature
Max Junction Temperature
Storage Temperature Range
Thermal Resistance Junction−to−Air
ESD Protection
Micro8
9−Pin Flip−Chip CSP
Symbol
V
p
Op Vp
V
in
Iout
Pd
T
A
T
J
T
stg
R
qJA
−
Value
6.0
2.2 to 5.5 V
2.0 V = Functional Only
−0.3 to Vcc +0.3
500
Internally Limited
−40 to +85
150
−65 to +150
230
(Note 3)
8000
>250
Unit
V
−
V
mA
−
°C
°C
°C
°C/W
V
Human Body Model (HBM) (Note 4)
Machine Model (MM) (Note 5)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T
A
= +25°C.
2. The thermal shutdown set to 160°C (typical) avoids irreversible damage on the device due to power dissipation. For further information see
page 10.
3. For the 9−Pin Flip−Chip CSP package, the R
qJA
is highly dependent of the PCB Heatsink area. For example, R
qJA
can equal 195°C/W with
50 mm
2
total area and also 135°C/W with 500 mm
2
. For further information see page 10. The bumps have the same thermal resistance and
all need to be connected to optimize the power dissipation.
4. Human Body Model, 100 pF discharge through a 1.5 kW resistor following specification JESD22/A114.
5. Machine Model, 200 pF discharged through all pins following specification JESD22/A115.
http://onsemi.com
3
NCP2890, NCV2890
ELECTRICAL CHARACTERISTICS
Limits apply for T
A
between −40°C to +85°C (Unless otherwise noted).
Characteristic
Supply Quiescent Current
Symbol
I
dd
Conditions
V
p
= 2.6 V, No Load
V
p
= 5.0 V, No Load
V
p
= 2.6 V, 8
W
V
p
= 5.0 V, 8
W
Common Mode Voltage
Shutdown Current
Shutdown Voltage High
Shutdown Voltage Low
Turning On Time (Note 8)
Output Swing
Rms Output Power
V
cm
I
SD
V
SDIH
V
SDIL
T
WU
V
loadpeak
P
O
−
−
−
−
C
by
= 1
mF
V
p
= 2.6 V, R
L
= 8.0
W
V
p
= 5.0 V, R
L
= 8.0
W
(Note 7)
V
p
= 2.6 V, R
L
= 4.0
W
THD + N < 0.1%
V
p
= 2.6 V, R
L
= 8.0
W
THD + N < 0.1%
V
p
= 5.0 V, R
L
= 8.0
W
THD + N < 0.1%
V
p
= 5.0 V, R
L
= 8.0
W
V
p
= 2.6 V
V
p
= 5.0 V
V
p
= 2.6 V, G = 2.0
10 Hz < F < 20 kHz
V
p
= 5.0 V, G = 10
10 Hz < F < 20 kHz
Positive Supply Rejection Ratio
PSRR V+
G = 2.0, R
L
= 8.0
W
Vp
ripple_pp
= 200 mV
C
by
= 1.0
mF
Input Terminated with 10
W
F = 217 Hz
V
p
= 5.0 V
V
p
= 3.0 V
V
p
= 2.6 V
F = 1.0 kHz
V
p
= 5.0 V
V
p
= 3.0 V
V
p
= 2.6 V
Efficiency
Thermal Shutdown Temperature (Note 9)
Total Harmonic Distortion
h
T
sd
THD
V
p
= 2.6, F = 1.0 kHz
R
L
= 4.0
W,
A
V
= 2.0
P
O
= 0.32 W
V
p
= 5.0 V, F = 1.0 kHz
R
L
= 8.0
W,
A
V
= 2.0
P
O
= 1.0 W
6.
7.
8.
9.
V
p
= 2.6 V, P
orms
= 320 mW
V
p
= 5.0 V, P
orms
= 1.0 W
Min
(Note 6)
−
−
−
−
−
−
1.2
−
−
2.0
4.0
−
Typ
1.5
1.7
1.7
1.9
V
p
/2
10
−
−
285
2.12
4.15
0.36
0.28
−
1.08
−
−30
−
84
−
0.65
30
−
W
mV
dB
−
Max
(Note 6)
4
5.5
−
600
−
0.4
−
−
−
−
V
nA
V
V
ms
V
W
Unit
mA
Maximum Power Dissipation (Note 8)
Output Offset Voltage
Signal−to−Noise Ratio
P
Dmax
V
OS
SNR
−
77
−
dB
−
−
−
−64
−72
−73
−
−
−
−
−
−
−
−
140
−
−
−
−
−
−
−64
−74
−75
48
63
160
−
0.04
−
−
0.02
−
−
−
−
−
−
180
−
−
−
−
−
−
%
°C
%
Min/Max limits are guaranteed by design, test or statistical analysis.
This parameter is not tested in production for 9−Pin Flip−Chip CSP package in case of a 5.0 V power supply.
See page 11 for a theoretical approach of this parameter.
For this parameter, the Min/Max values are given for information.
http://onsemi.com
4
NCP2890, NCV2890
TYPICAL PERFORMANCE CHARACTERISTICS
1
V
p
= 5 V
R
L
= 8
W
P
out
= 250 mW
A
V
= 2
THD + N (%)
1
V
p
= 3.3 V
R
L
= 8
W
P
out
= 150 mW
A
V
= 2
THD + N (%)
0.1
0.1
0.01
0.01
0.001
10
100
1000
FREQUENCY (Hz)
10,000
100,000
0.001
10
100
1000
FREQUENCY (Hz)
10,000
100,000
Figure 1. THD + N versus Frequency
Figure 2. THD + N versus Frequency
1
V
p
= 3 V
R
L
= 8
W
P
out
= 250 mW
A
V
= 2
THD + N (%)
THD + N (%)
0.1
1
V
p
= 2.6 V
R
L
= 8
W
P
out
= 100 mW
A
V
= 2
0.1
0.01
0.01
0.001
10
100
1000
FREQUENCY (Hz)
10,000
100,000
0.001
10
100
1000
FREQUENCY (Hz)
10,000
100,000
Figure 3. THD + N versus Frequency
Figure 4. THD + N versus Frequency
1
V
p
= 2.6 V
R
L
= 4
W
P
out
= 100 mW
A
V
= 2
THD + N (%)
10
V
p
= 5 V
R
L
= 8
W
1 kHz
A
V
= 2
1
THD + N (%)
0.1
0.1
0.01
0.01
0.001
10
100
1000
FREQUENCY (Hz)
10,000
100,000
0.001
0
200
400
600
800
1000
1200
1400
P
out
, POWER OUT (mW)
Figure 5. THD + N versus Frequency
Figure 6. THD + N versus Power Out
http://onsemi.com
5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
