SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 188 V
600 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
(2)
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)
(+)
(+)
DEVICE MARKING
CODE
UNI
BI
KD
KE
KF
KG
AH
AK
KL
KM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
KY
KZ
BD
BE
LF
LG
BH
BK
BL
BM
LN
LM
LQ
LR
BS
BT
LU
LV
BW
BX
BY
BZ
CD
CE
MF
MG
CH
CK
CL
CM
CN
CP
CQ
CR
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
MAX.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
TEST
CURRENT
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
800
800
800
800
500
500
200
200
100
100
50
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
10.2
11.3
9.3
10.3
8.4
9.3
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
SMBJ5.0
(+)
SMBJ5.0A
(5)
SMBJ6.0
SMBJ6.0A
(+)
SMBJ6.5
(+)
SMBJ6.5A
(+)
SMBJ7.0
(+)
SMBJ7.0A
(+)
SMBJ7.5
(+)
SMBJ7.5A
(+)
SMBJ8.0
(+)
SMBJ8.0A
(+)
SMBJ8.5
(+)
SMBJ8.5A
(+)
SMBJ9.0
(+)
SMBJ9.0A
(+)
SMBJ10
(+)
SMBJ10A
(+)
SMBJ11
(+)
SMBJ11A
(+)
SMBJ12
(+)
SMBJ12A
(+)
SMBJ13
(+)
SMBJ13A
(+)
SMBJ14
(+)
SMBJ14A
(+)
SMBJ15
(+)
SMBJ15A
(+)
SMBJ16
(+)
SMBJ16A
(+)
SMBJ17
(+)
SMBJ17A
(+)
SMBJ18
(+)
SMBJ18A
(+)
SMBJ20
(+)
SMBJ20A
(+)
SMBJ22
(+)
SMBJ22A
(+)
SMBJ24
(+)
SMBJ24A
(+)
SMBJ26
(+)
SMBJ26A
(+)
SMBJ28
(+)
SMBJ28A
(+)
SMBJ30
(+)
SMBJ30A
(+)
SMBJ33
(+)
SMBJ33A
(+)
SMBJ36
(+)
SMBJ36A
(+)
SMBJ40
(+)
SMBJ40A
www.vishay.com
2
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
LF
LG
LH
LK
LL
LM
LN
LP
LQ
LR
LS
LT
LU
LV
LW
LX
LY
LZ
MD
ME
MF
MG
MH
MK
ML
MM
MN
MP
MQ
MR
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88392
Revision: 04-Sep-07
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)
(+)
(+)
DEVICE MARKING
CODE
UNI
BI
CS
CT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PS
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
MAX.
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
1.7
2.0
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
SMBJ43
SMBJ45
SMBJ48
(+)
SMBJ43A
(+)
SMBJ45A
(+)
SMBJ48A
(+)
SMBJ51
(+)
(+)
SMBJ51A
SMBJ54
(+)
SMBJ54A
(+)
SMBJ58
(+)
SMBJ58A
(+)
SMBJ60
(+)
SMBJ60A
(+)
SMBJ64
(+)
SMBJ64A
(+)
SMBJ70
(+)
SMBJ70A
(+)
SMBJ75
(+)
SMBJ75A
(+)
SMBJ78
(+)
SMBJ78A
(+)
SMBJ85
(+)
SMBJ85A
(+)
SMBJ90
(+)
SMBJ90A
(+)
SMBJ100
(+)
SMBJ100A
(+)
SMBJ110
(+)
SMBJ110A
(+)
SMBJ120
(+)
SMBJ120A
(+)
SMBJ130
(+)
SMBJ130A
(+)
SMBJ150
(+)
SMBJ150A
(+)
SMBJ160
(+)
SMBJ160A
(+)
SMBJ170
(+)
SMBJ170A
SMBJ188
SMBJ188A
Notes:
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PS
(1) Pulse test: tp
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum V
BR
is 7.25 V
(6) V
F
= 3.5 V at I
F
= 50 A (uni-directional only)
(+)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Document Number: 88392
Revision: 04-Sep-07
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
Note:
(1) Mounted on minimum recommended pad layout
(1)
SYMBOL
R
θJA
R
θJL
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMBJ5.0A-E3/52
SMBJ5.0A-E3/5B
SMBJ5.0AHE3/52
(1)
SMBJ5.0AHE3/5B
(1)
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
I
PPM
- Peak Pulse Current,
%
I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
10
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
6000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
V
R
, Measured at Stand-Off
Voltage V
WM
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
200
25
0
0
25
50
75
100
125
150
175
200
10
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off
Voltage
(V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88392
Revision: 04-Sep-07
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
100
200
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
8.3
ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
0.001
10
0.01
0.1
1.0
10
100
1000
1
10
100
t
p
- Pulse Duration (s)
Number
of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
0.085 (2.159)
MAX.
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
