CMPDM7120G
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7120G
is an Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers low rDS(ON)
and low threshold voltage.
MARKING CODE: C71G
SOT-23 CASE
•
Device is
Halogen Free
by design
APPLICATIONS:
•
Load/Power switches
•
Power supply converter circuits
•
Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
ESD protection up to 2kV
•
Low rDS(ON) (0.25Ω MAX @ VGS=1.5V)
•
High current (ID=1.0A)
•
Logic level compatibility
•
Small SOT-23 package
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
A
A
mW
°C
°C/W
UNITS
μA
μA
V
V
V
20
8.0
1.0
4.0
350
-65 to +150
357
MAX
10
10
1.2
1.1
0.10
0.14
0.25
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=10V, ID=1.0mA
VSD
VGS=0, IS=1.0A
rDS(ON)
VGS=4.5V, ID=0.5A
rDS(ON)
VGS=2.5V, ID=0.5A
rDS(ON)
VGS=1.5V, ID=0.1A
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
gFS
VDS=10V, ID=0.5A
Crss
VDS=10V, VGS=0, f=1.0MHz
Ciss
VDS=10V, VGS=0, f=1.0MHz
Coss
VDS=10V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=5.0V, ID=0.5A
toff
VDD=10V, VGS=5.0V, ID=0.5A
otherwise noted)
MIN
TYP
20
0.5
0.075
0.10
0.17
2.4
0.25
0.65
4.2
45
220
120
25
140
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
R2 (2-August 2011)
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