NPN EPITAXIAL PLANAR TRANSISTOR
| 参数名称 | 属性值 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknow |
| Is Samacsys | N |
| 最大集电极电流 (IC) | 10 A |
| 集电极-发射极最大电压 | 150 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 100 |
| JEDEC-95代码 | TO-252 |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
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|---|---|---|---|---|---|---|---|---|---|
| 描述 | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR | NPN EPITAXIAL PLANAR TRANSISTOR |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | - |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow | - |
| Is Samacsys | N | N | N | N | N | N | N | N | - |
| 最大集电极电流 (IC) | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | - |
| 集电极-发射极最大电压 | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V | - |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | - |
| 最小直流电流增益 (hFE) | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | - |
| JEDEC-95代码 | TO-252 | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-252 | - |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 | - |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 端子数量 | 2 | 3 | 3 | 3 | 3 | 3 | 3 | 2 | - |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE | - |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | - |
| 表面贴装 | YES | NO | NO | NO | NO | NO | NO | YES | - |
| 端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | - |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
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