BYW178
Vishay Telefunken
Very Fast Silicon Mesa Rectifier
Features
D
D
D
D
D
D
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Very fast reverse recovery time
Low reverse recovery peak current
Applications
Ultra fast rectifier for switching mode power supplies
94 9588
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Test Conditions
Type
Symbol
V
R
=V
RRM
I
FSM
I
FRM
I
FAV
T
j
=T
stg
Value
800
80
15
3
–55...+175
Unit
V
A
A
A
°
C
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction lead
Junction ambient
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Test Conditions
I
F
=3A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
Reverse recovery current
I
F
=1A, di
F
/dt –50A/
m
s,
V
Batt
=200V
Reverse recovery time
I
F
=1A, di
F
/dt –50A/
m
s,
V
Batt
=200V,i
R
=0.25xI
RM
Reverse recovery time (JEDEC) I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type Symbol
V
F
I
R
I
R
I
RM
t
rr
t
rr
Min
Typ
Max
1.9
1
20
Unit
V
m
A
m
A
A
ns
60
ns
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 37.5mm
Symbol
R
thJL
R
thJA
Value
25
70
Unit
K/W
K/W
Electrical Characteristics
x
x
2.2
50
Document Number 86047
Rev. 2, 24-Jun-98
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BYW178
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
40
I
FAV
– Average Forward Current ( A )
4
30
3
20
l
10
l
2
1
f 20kHz
0
R
thJA
=25K/W
0
40
80
L=10mm
120
160
200
v
0
0
5
10
15
T
L
=constant
20
25
30
94 9471
94 9570
l – Lead Length ( mm )
T
amb
– Ambient Temperature (
°C
)
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
5
2.0
1.6
1.2
0.8
0.4
0
0
40
80
120
160
200
f 20kHz
R
thJA
=70K/W
PCB
I
RM
– Reverse Recovery Current ( A )
I
FAV
– Average Forward Current ( A )
dI
F
/dt=50A/
m
s
4
3
2
1
0
0.1
1
I
F
– Forward Current ( A )
10
v
94 9468
T
amb
– Ambient Temperature (
°C
)
94 9571
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Typ. Reverse Recovery Current vs.
Forward Current
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Document Number 86047
Rev. 2, 24-Jun-98
BYW178
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 86047
Rev. 2, 24-Jun-98
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