BYV10-600P
Ultrafast power diode
30 August 2013
Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching
Low leakage current
Low forward voltage drop
Low thermal resistance
Soft recovery characteristic
3. Applications
•
•
High frequency switched-mode power supplies
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 109 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
I
F
= 10 A; T
j
= 150 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C;
Fig. 7
-
-
1.6
V
Conditions
Min
-
-
Typ
-
-
Max
600
10
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
35
50
ns
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TO
-22
0
AC
NXP Semiconductors
BYV10-600P
Ultrafast power diode
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; connected to
cathode
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220AC (SOD59)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYV10-600P
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYV10-600P
Type number
BYV10-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
DC
δ = 0.5 ; T
mb
≤ 109 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 109 °C;
square-wave pulse
BYV10-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Conditions
Min
-
-
-
-
-
Max
600
600
600
10
20
Unit
V
V
V
A
A
Product data sheet
30 August 2013
2/9
NXP Semiconductors
BYV10-600P
Ultrafast power diode
Symbol
I
FSM
Parameter
non-repetitive peak forward
current
Conditions
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Min
-
-
-65
-
Max
80
88
175
175
aaa-008977
Unit
A
A
°C
°C
T
stg
T
j
25
P
tot
(W)
20
storage temperature
junction temperature
aaa-008948
δ=1
20
P
tot
(W)
a = 1.57
1.9
2.2
2.8
4.0
0.5
0.2
0.1
15
15
10
10
5
5
0
0
5
10
I
F(AV)
(A)
15
0
0
2.5
5
7.5
I
F(AV)
(A)
10
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
15
I
F(AV)
(A)
10
aaa-008978
10
4
I
FSM
(A)
10
3
aaa-008979
109 °C
5
10
2
I
F
I
FSM
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
t
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
© NXP N.V. 2013. All rights reserved
BYV10-600P
All information provided in this document is subject to legal disclaimers.
Product data sheet
30 August 2013
3/9
NXP Semiconductors
BYV10-600P
Ultrafast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
Z
th(j-mb)
(K/W)
1
Conditions
Fig. 5
Min
-
Typ
-
Max
3.5
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
aaa-008983
10
-1
δ = 0.5
10
-2
δ = 0.3
δ = 0.1
δ = 0.05
10
-3
δ = 0.02
δ = 0.01
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
1
P
δ=
t
p
T
t
T
t
p
(s)
10
10
-4
10
-6
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 10 A; T
j
= 25 °C;
Fig. 6
I
F
= 10 A; T
j
= 150 °C;
Fig. 6
I
R
reverse current
V
R
= 600 V; T
j
= 25 °C
V
R
= 500 V; T
j
= 150 °C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
-
40
-
ns
-
35
50
ns
Min
-
-
-
-
Typ
1.5
-
-
-
Max
2
1.6
10
250
Unit
V
V
µA
µA
Static characteristics
BYV10-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 August 2013
4/9
NXP Semiconductors
BYV10-600P
Ultrafast power diode
20
I
F
(A)
15
aaa-008980
I
F
dl
F
dt
t
rr
10
(1)
(2)
(3)
time
25 %
Q
r
100 %
5
I
R
0
0
0.5
1
1.5
2
2.5
I
RM
003aac562
V
F
(V)
Fig. 7.
Reverse recovery definitions; ramp recovery
Fig. 6.
Forward current as a function of forward
voltage
BYV10-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 August 2013
5/9
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