BY527
Vishay Telefunken
Silicon Mesa Rectifier
Features
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated junction
Hermetically sealed package
Low reverse current
High surge current capability
Applications
General purpose
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameters
Peak reverse voltage, non repetitive
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Junction and storage
temperature range
Test Conditions
Type
Symbol
V
RSM
V
R
I
FSM
I
FRM
I
FAV
P
R
E
R
i
2
*t
T
j
=T
stg
Value
1250
800
50
12
2
1000
20
8
–55...+175
Unit
V
V
A
A
A
W
mJ
A
2
*s
t
p
=10ms,
half sinewave
ϕ=180
°
T
j
=175
°
C, t
p
=20
m
s,
half sinus wave
I
(BR
V
)R
=1A, T
j
=175
°
C
i
2
*t–rating
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86007
Rev. 2, 24-Jun-98
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BY527
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
y
Test Conditions
I
F
=1A
I
F
=10A
V
R
=800V
V
R
=800V, T
j
=100
°
C
I
R
=100
m
A, t
p
/T=0.01,
t
p
=0.3ms
V
R
=0, f=0.47MHz
I
F
=0.5A, I
R
=1A, i
R
=0.25A
I
F
=1A, d
i
/d
t
=5A/
m
s,
V
R
=50V
I
F
=1A, d
i
/d
t
=5A/
m
s
Type
Symbol
V
F
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
Min
Typ
0.9
0.1
5
1250
50
4
4
3
Max
1.0
1.65
1
10
Unit
V
V
m
A
m
A
V
pF
m
s
m
s
Reverse recovery charge
m
C
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
l
100
80
60
40
20
0
0
5
10
15
20
25
30
94 9163
1.2
l
I
FAV
– Average Forward Current ( A )
1.0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
200
l – Lead Length ( mm )
T
amb
– Ambient Temperature (
°C
)
R
thJA
=100K/W
PCB
V
R
= V
R RM
T
L
=constant
94 9101
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
I
FAV
– Average Forward Current ( A )
2.0
1.6
1.2
0.8
R
thJA
0.4
0
200
94 9172
I
R
– Reverse Current (
m
A )
100
Scattering Limit
10
1
V
R
= V
R RM
0
40
80
120
160
v
45K/W
80
120
160
200
V
R
= V
R RM
l=12mm
0
40
0.1
94 9176
T
j
– Junction Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
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Document Number 86007
Rev. 2, 24-Jun-98
BY527
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 86007
Rev. 2, 24-Jun-98
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