BY448 , BY458
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
949539
APPLICATIONS
• High voltage rectification
• Efficiency diode in horizontal deflection circuits
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
PARTS TABLE
PART
BY448
BY458
TYPE DIFFERENTIATION
V
R
= 1500 V; I
FAV
= 2 A
V
R
= 1200 V; I
FAV
= 2 A
PACKAGE
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy
l
(BR)R
= 0.4 A
TEST CONDITION
See electrical characteristics
t
p
= 10 ms, half sine wave
PART
BY448
BY458
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
T
j
T
stg
E
R
VALUE
1500
1200
30
2
140
- 55 to + 175
10
UNIT
V
V
A
A
°C
°C
mJ
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Total reverse recovery time
Reverse recovery time
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 140 °C
I
F
= 1 A, - dI
F
/dt = 0.05 A/μs
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
SYMBOL
V
F
I
R
I
R
t
rr
t
rr
MIN.
-
-
-
-
-
TYP.
-
-
-
-
-
MAX
1.6
3
140
20
2
UNIT
V
μA
μA
μs
μs
Document Number: 86006
Rev. 1.7, 09-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
147
BY448 , BY458
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
l
100
l
V
R
= V
RRM
1000
I
R
- Reverse Current (μA)
15
20
25
30
80
T
L
= constant
60
40
20
0
0
949101
100
10
1
5
10
16419
25
50
75
100
125
150
l - Lead Length (mm)
T
j
- Junction Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 4 - Reverse Current vs. Junction Temperature
P
R
- Reverse Power Dissipation (mW)
100
T
j
= 150 °C
400
V
R
= V
RRM
350
300
250
200
150
100
50
0
25
50
75
100
125
150
P
R
- Limit at 80 % V
R
P
R
- Limit at 100 % V
R
I
F
- Forward Current (A)
10
1
T
j
= 25 °C
0.1
0.01
0.001
0
16417
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
16420
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
2.5
35
V
R
= V
RRM
I
FAV
- Average Forward Current (A)
f = 1 MHz
2.0
C
D
- Diode Capacitance (pF)
150
16421
half
sine
wave
R
thJA
= 45 K/W
l = 10 mm
30
25
20
15
10
5
0
1.5
1.0
0.5
R
thJA
= 100 K/W
PCB: d = 25 mm
0
0
16418
25
50
75
100
125
0.1
1
10
100
T
amb
- Ambient Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
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148
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86006
Rev. 1.7, 09-Aug-10
BY448 , BY458
Standard Avalanche Sinterglass
Diode
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Vishay Semiconductors
Document Number: 86006
Rev. 1.7, 09-Aug-10
3.6 (0.142) max.
20543
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
149
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Document Number: 91000
Revision: 11-Mar-11
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