Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Fast
switching speed
・High
voltage
APPLICATIONS
・Designed
for use in electronic ballast
and In switchmode power supplies
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUL45
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (peak)
Base current
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
700
400
9
5
10
2
75
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.65
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CEO
I
CES
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=0.1 A ;I
B
=0;L=25mH
I
C
=1A ;I
B
=0.2 A
I
C
=2A ;I
B
=0.4 A
I
C
=1A ;I
B
=0.2 A
I
C
=2A ;I
B
=0.4 A
V
CE
=RatedV
CEO;
I
B
=0;
V
CE
=RatedV
CES;
V
EB
=0;
T
C
=125℃
V
EB
=9V; I
C
=0
I
C
=0.3A;V
CE
=5V
I
C
=2A;V
CE
=1V
I
C
=10mA;V
CE
=5V
I
E
=0; V
CB
=10V;f=1MHz
I
C
=0.5 A ; V
CE
=10V
14
7
10
14
22
50
12
MIN
400
0.175
0.25
0.84
0.89
TYP.
BUL45
MAX
UNIT
V
0.25
0.4
1.2
1.25
100
10
100
0.1
34
V
V
V
V
μA
μA
mA
75
pF
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUL45
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
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