UL62H256B
Low Voltage Automotive Fast 32K x 8 SRAM
Features
F
32768 x 8 bit static CMOS RAM
F
35 and 55 ns Access Time
F
Common data inputs and
F
F
Description
address change, the data outputs
go High-Z until the new information
is available. The data outputs have
no preferred state. The Read cycle
is finished by the falling edge of W,
or by the rising edge of E, respec-
tively.
Data retention is guaranteed down
to 1.5 V. With the exception of E, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required.
F
F
F
F
F
F
F
The UL62H256B is a static RAM
manufactured using a CMOS pro-
cess technology with the following
operating modes:
data outputs
- Read
- Standby
Three-state outputs
- Write
- Data Retention
Typ. operating supply current
The memory array is based on a
35 ns: 45 mA
6-Transistor cell.
55 ns: 30 mA
Standby current < 30 µA at 125 °C The circuit is activated by the fal-
ling edge of E. The address and
Power supply voltage 2.5 V
control inputs open simultaneously.
Operating temperature range
According to the information of W
-40 °C to 85 °C
-40 °C to 125 °C
and G, the data inputs, or outputs,
are active. In a Read cycle, the
CECC 90000 Quality Standard
data outputs are activated by the
ESD protection > 2000 V
falling edge of G, afterwards the
(MIL STD 883C M3015.7)
data word will be available at the
Latch-up immunity >100 mA
outputs DQ0-DQ7. After the
Package: SOP28 (300/330 mil)
Pin Configuration
Pin Description
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
Signal Name
A0 - A14
DQ0 - DQ7
E
G
W
VCC
VSS
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
SOP
20
19
18
17
16
15
Top View
November 26, 2002
1
UL62H256B
Block Diagram
A6
A7
A8
A9
A10
A11
A12
A13
A14
Row Address
Inputs
Row Decoder
Memory Cell
Array
512 Rows x
64 x 8 Columns
Common Data I/O
A0
A1
A2
A3
A4
A5
Column Address
Inputs
Column Decoder
DQ0
Sense Amplifier/
Write Control Logic
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Address
Change
Detector
Clock
Generator
V
CC
V
SS
E
W
G
Truth Table
Operating Mode
Standby/not selected
Internal Read
Read
Write
* H or L
E
H
L
L
L
W
*
H
H
L
G
*
H
L
*
DQ0 - DQ7
High-Z
High-Z
Data Outputs Low-Z
Data Inputs High-Z
2
November 26, 2002
UL62H256B
Characteristics
All voltages are referenced to V
SS
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
IL
= 0 V and V
IH
= 2.2 V. The timing reference level of all input and output signals is 1.1 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured ±200 mV from steady-state voltage.
Absolute Maximum Ratings
a
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Output Short-Circuit Current
at V
CC
= 2.5 V and V
O
= 0 V
c
a
Symbol
V
CC
V
I
V
O
P
D
Min.
-0.3
-0.3
-0.3
-
-40
-40
-65
Max.
4
V
CC
+ 0.3
b
V
CC
+ 0.3
b
1
85
125
150
100
Unit
V
V
V
W
°C
°C
mA
K-Type
A-Type
T
a
T
stg
| I
OS
|
b
c
Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating
only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability
Maximum voltage is 4 V
Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s.
Recommended
Operating Conditions
Power Supply Voltage
Input Low Voltage
d
Input High Voltage
d
Symbol
V
CC
V
IL
V
IH
Conditions
Min.
2.3
-0.2
2.0
Max.
2.7
0.4
V
CC
+ 0.2
Unit
V
V
V
-2 V at Pulse Width 10 ns
November 26, 2002
3
UL62H256B
Electrical Characteristics
Supply Current - Operating Mode
Symbol
I
CC(OP)
V
CC
V
IL
V
IH
t
cW
t
cW
V
CC
V
E
K-Type
A-Type
V
CC
V
E
K-Type
A-Type
V
CC
I
OH
V
CC
I
OL
V
CC
V
IH
V
CC
V
IL
V
CC
V
OH
V
CC
V
OL
V
CC
V
OH
V
CC
V
OL
Conditions
=
=
=
=
=
2.7 V
0.6 V
2.0 V
35 ns
55 ns
Min.
Max.
Unit
90
70
mA
mA
Supply Current - Standby Mode
(CMOS level)
I
CC(SB)
= 2.7 V
= V
CC
- 0.2 V
6
30
= 2.7 V
= 2.2 V
10
20
= 2.3 V
= -0.5 mA
= 2.3 V
= 0.5 mA
= 2.7 V
= 2.7 V
= 2.7 V
= 0V
=
=
=
=
2.3 V
2.0 V
2.3 V
0.4 V
2.0
0.4
2
-2
-0.5
0.5
mA
mA
V
V
µA
µA
mA
mA
µA
µA
Supply Current - Standby Mode
(TTL level)
I
CC(SB)1
Output High Voltage
Output Low Voltage
Input High Leakage Current
Input Low Leakage Current
Output High Current
Output Low Current
Output Leakage Current
High at Three-State Outputs
Low at Three-State Outputs
V
OH
V
OL
I
IH
I
IL
I
OH
I
OL
I
OHZ
I
OLZ
= 2.7 V
= 2.7 V
= 2.7 V
= 0V
2
-2
µA
µA
4
November 26, 2002
UL62H256B
Switching Characteristics
Read Cycle
Read Cycle Time
Address Access Time to Data Valid
Chip Enable Access Time to Data Valid
G LOW to Data Valid
E HIGH to Output in High-Z
G HIGH to Output in High-Z
E LOW to Output in Low-Z
G LOW to Output in Low-Z
Output Hold Time from Address Change
E LOW to Power-Up Time
E HIGH to Power-Down Time
Symbol
Alt.
t
RC
t
AA
t
ACE
t
OE
t
HZCE
t
HZOE
t
LZCE
t
LZOE
t
OH
t
PU
t
PD
IEC
t
cR
t
a(A)
t
a(E)
t
a(G)
t
dis(E)
t
dis(G)
t
en(E)
t
en(G)
t
v(A)
3
0
3
0
35
Min.
35
Max.
Min.
55
Unit
Max.
35
35
35
15
12
12
55
55
55
25
15
15
3
0
3
0
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Switching Characteristics
Write Cycle
Write Cycle Time
Write Pulse Width
Write Setup Time
Address Setup Time
Address Valid to End of Write
Chip Enable Setup Time
Pulse Width Chip Enable to End of Write
Data Setup Time
Data Hold Time
Address Hold from End of Write
W LOW to Output in High-Z
G HIGH to Output in High-Z
W HIGH to Output in Low-Z
G LOW to Output in Low-Z
Symbol
Alt.
t
WC
t
WP
t
WP
t
AS
t
AW
t
CW
t
CW
t
DS
t
DH
t
AH
t
HZWE
t
HZOE
t
LZWE
t
LZOE
IEC
t
cW
t
w(W)
t
su(W)
t
su(A)
t
su(A-WH)
Min.
35
Max.
Min.
55
Unit
Max.
35
20
20
0
25
25
25
15
0
0
15
12
0
0
55
35
35
0
40
40
40
25
0
0
20
15
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
su(E)
t
w(E)
t
su(D)
t
h(D)
t
h(A)
t
dis(W)
t
dis(G)
t
en(W)
t
en(G)
November 26, 2002
5
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