INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUL1203E
DESCRIPTION
·High
Voltage
·High
Speed Switching
APPLICATIONS
·Electronic
ballasts for fluorescent lighting
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1200
1200
550
9
5
8
2
4
100
150
-65~150
UNIT
V
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(
sat
)-1
V
CE(
sat
)-2
V
CE(
sat
)-3
V
BE(
sat
)-1
V
BE(
sat
)-2
I
CES
I
CEO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 0.1A; I
B
= 0, L= 25mH
I
C
= 1A; I
B
= 0.2A
B
BUL1203E
MIN
550
TYP.
MAX
UNIT
V
0.5
0.7
1.5
1.5
1.5
0.1
0.1
10
10
14
9
32
28
V
V
V
V
V
mA
mA
I
C
= 2A; I
B
= 0.4A
B
I
C
= 3A; I
B
= 1A
B
I
C
= 2A; I
B
= 0.4A
B
I
C
= 3A; I
B
= 1A
B
V
CE
= 1200V; V
BE
= 0
V
CE
= 550V; I
B
= 0
I
C
= 1mA; V
CE
= 5V
I
C
= 10mA; V
CE
= 5V
I
C
= 0.8A; V
CE
= 3V
I
C
= 2A; V
CE
= 5V
Switching Times ;Resistive Load
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 2A; I
B1
= 0.4A; I
B2
= -0.8A;
t
p
= 30μs; V
CC
= 150V
0.5
3.0
0.3
μs
μs
μs
isc Website：www.iscsemi.cn
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