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1N5711

产品描述0.033 A, SILICON, SIGNAL DIODE, DO-35
产品类别分立半导体    二极管   
文件大小127KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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1N5711概述

0.033 A, SILICON, SIGNAL DIODE, DO-35

0.033 A, 硅, 信号二极管, DO-35

1N5711规格参数

参数名称属性值
零件包装代码DO-35
制造商包装代码DO-35

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1N5711
Small Signal Schottky Diodes
VOLTAGE RANGE:
70V
POWER DISSIPATION:
400 mW
Features
For general purpos e applications
Metal s ilicon s chottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fas t s witching m ake it ideal for protection of
MOS devices ,s teering,bias ing and coupling diodes for
fas t s witching and low logic level applications
DO - 35(GLASS)
Mechanical Data
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage
Pow er dissipation (Inf inite Heat Sink)
Maximum single cycle surge 10
Junction tenperature
Storage temperature range
s square w ave
Value
70.0
400
1)
2.0
125
c-55
---+ 150
UNITS
V
zm
W
A
V
RRM
P
tot
I
FSM
T
J
T
STG
1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage
Leakage current
Forw ard voltage drop
@ V
R
=50V
@
I
F
=1mA
I
F
=15mA
Junction capacitance @ V
R
=0V ,f=1MHz
Reverse recovery time @ I
F
=I
R
=5mA ,recover to 0.1 I
R
Termal resistance junction to ambient air
@ I
R
=10
A
Min.
70.0
Typ.
Max.
UNITS
V
V
R
I
R
V
F
C
J
t
rr
R
θ
JA
200.0
0.41
1.0
2
1
0.3
anA
V
pF
ns
/m W
http://www.luguang.cn
mail:lge@luguang.cn

 
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