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1N5404

产品描述3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
产品类别分立半导体    普通整流二极管   
文件大小168KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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1N5404概述

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD

3 A, 400 V, 硅, 整流二极管, DO-201AD

1N5404规格参数

参数名称属性值
封装类型
Case Style
DO-27
IF(A)3.0
Maximum recurrent peak reverse voltage400
Peak forward surge curre150
Maximum instantaneous forward voltage1.0
@IVA(A)3.0
Maximum reverse curre10.0
TRR(nS)/
classDiodes

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1N5400-1N5408
3.0 AMP. Silicon Rectifiers
DO-201AD
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@ T
A
= 75
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Rating for Fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage
@ 3.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Maximum Full Load Reverse Current, Full
Cycle Average .375”(9.5mm) Lead Length
@ T
L
=75
o
C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Units
V
V
V
A
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
200
166
1.0
5.0
100
30
50
40
-65 to +150
-65 to +150
A
A
2
s
V
uA
uA
uA
pF
C/W
o
C
o
C
HT
IR
Cj
R
θJA
T
J
o
Storage Temperature Range
T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes:
2. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
http://www.luguang.cn
mail:lge@luguang.cn

1N5404相似产品对比

1N5404 1N5400 1N5401 1N5402 1N5406 1N5407
描述 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD
封装类型
Case Style
DO-27 DO-27 DO-27 DO-27 DO-27 DO-27
IF(A) 3.0 3.0 3.0 3.0 3.0 3.0
Maximum recurrent peak reverse voltage 400 50 100 200 600 800
Peak forward surge curre 150 150 150 150 150 150
Maximum instantaneous forward voltage 1.0 1.0 1.0 1.0 1.0 1.0
@IVA(A) 3.0 3.0 3.0 3.0 3.0 3.0
Maximum reverse curre 10.0 10.0 10.0 10.0 10.0 10.0
TRR(nS) / / / / / /
class Diodes Diodes Diodes Diodes Diodes Diodes

 
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