电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SM8A27_08

产品描述6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
产品类别半导体    分立半导体   
文件大小99KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SM8A27_08概述

6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB

6600 W, 单向, 硅, 瞬态抑制二极管, DO-218AB

SM8A27_08规格参数

参数名称属性值
端子数量1
元件数量1
加工封装描述ROHS COMPLIANT, PLASTIC PACKAGE-1
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子涂层MATTE TIN
端子位置SINGLE
包装材料PLASTIC/EPOXY
工艺ZENER
结构SINGLE
壳体连接ANODE
二极管元件材料SILICON
最大功耗极限8 W
极性UNIDIRECTIONAL
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
关闭电压22 V
最大非重复峰值转速功率6600 W

文档预览

下载PDF文档
SM8A27
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-218AB
PRIMARY CHARACTERISTICS
V
BR
P
PPM
(10 x 1000 μs)
P
D
V
WM
I
RSM
I
FSM
T
J
max.
Polarity
Package
27 V
6600 W
8W
22 V
130 A
700 A
175 °C
Uni-directional
DO-218AB
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with 10/1000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
Maximum working stand-off voltage
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
SYMBOL
P
PPM
P
D
I
RSM
V
WM
I
FSM
T
J
, T
STG
VALUE
6600
8.0
130
22.0
700
-55 to +175
UNIT
W
W
A
V
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
V
BR
AT I
T
(V)
MIN.
SM8A27
24
MAX.
30
TEST CURRENT
I
T
(mA)
10
STAND-OFF VOLTAGE
V
WM
(V)
22
Revision: 23-Apr-14
Document Number: 88386
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 355  1416  575  63  2561  24  29  48  37  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved