SM6S Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive Transient Voltage Suppressors
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
d*
nte
ate
P
0.413(10.5)
0.374(9.5)
Stand-off Voltage
10 to 36V
Peak Pulse Power
4600W (10/1000µs)
3600W (10/10,000µs)
Mounting Pad Layout
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
Dimensions in
inches and (millimeters)
0.366(9.3)
0.343(8.7)
0.150(3.8)
0.126(3.2)
LEAD 1
0.197(5.0)
0.185(4.7)
0.138(3.5)
0.098(2.5)
0.606(15.4)
0.583(14.8)
*
Patent #’s:
0.016 (0.4) Min.
0.028(0.7)
0.020(0.5)
0.098(2.5)
0.059(1.5)
4,980,315
5,166,769
5,278,095
LEAD 2/METAL HEATSINK
Features
• Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High temperature stability due to unique oxide passiva-
tion and patented PAR
®
construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at T
J
= 175°C
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
• Low forward voltage drop
Mechanical Data
Case:
Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals:
Plated, solderable per MIL-STD-750, Method 2026
Polarity:
Heatsink is anode
Mounting Position:
Any
Weight:
0.091 oz., 2.58 g
Packaging codes/options:
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
Steady state power dissipation
Peak pulse current with a 10/1000µs waveform
(NOTE 1)
Symbol
P
PPM
P
D
I
PPM
I
FSM
R
ΘJC
T
J
, T
STG
Value
4600
3600
6.0
See Table 1
600
0.95
–55 to +175
Unit
W
W
A
A
°C/W
°C
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse derated above T
A
=25°C
Document Number 88384
01-Aug-02
www.vishay.com
1
SM6S Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Device Type
Breakdown Voltage
V
(BR)
(V)
Min.
SM6S10
SM6S10A
SM6S11
SM6S11A
SM6S12
SM6S12A
SM6S13
SM6S13A
SM6S14
SM6S14A
SM6S15
SM6S15A
SM6S16
SM6S16A
SM6S17
SM6S17A
SM6S18
SM6S18A
SM6S20
SM6S20A
SM6S22
SM6S22A
SM6S24
SM6S24A
SM6S26
SM6S26A
SM6S28
SM6S28A
SM6S30
SM6S30A
SM6S33
SM6S33A
SM6S36
SM6S36A
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
Max.
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
Test Current
I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Stand-off
Voltage
V
WM
(V)
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Maximum Max. Peak Maximum
Reverse
Pulse
Clamping
Leakage
Current
Voltage at
at V
WM
at 10/1000µs
I
PPM
o
Tc=175 C Waveform
V
C
I
D
(µA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
(A)
245
271
229
253
209
231
193
214
178
198
171
189
160
177
151
167
143
158
128
142
117
130
107
118
99
109
92
101
86
95
78
86
72
79
(V)
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
Note:
For all types maximum V
F
= 1.9V at I
F
= 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
www.vishay.com
2
Document Number 88384
01-Aug-02
SM6S Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Power Derating Curve
8.0
6,000
Load Dump Power Characteristics
(10ms Exponential Waveform)
5,000
Load Dump Power (W)
50
150
200
Power Dissipation (W)
6.0
4,000
3,000
2,000
4.0
2.0
1,000
0
0
100
0
25
50
75
100
125
150
175
Case Temperature (°C)
Case Temperature (°C)
Pulse Waveform
150
T
A
= 25°C
Pulse width (t
d
) is defined as
the point where the peak
current decays to 50% of I
PP
10,000
Reverse Power Capability
Input Peak Pulse Current %
t
r
= 10µs
100
Peak Value I
PP
50
Half Value –
I
PP
2
0
0
t
d
10
20
30
40
Reverse Surge Power (W)
1,000
10
100
Time, ms (t)
Pulse Width (ms) – 1/2 I
PP
Exponential Waveform
Typical Transient Thermal Impedance
100
Transient Thermal Impedance (°C/W)
R
ΘJA
10
1
R
ΘJC
0.1
0.01
0.01
0.1
1
10
100
t – Pulse Width (sec.)
Document Number 88384
01-Aug-02
www.vishay.com
3
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