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SI2304

产品描述N-Channel Enhancement Mode Field Effect Transistor
文件大小416KB,共5页
制造商MCC
官网地址http://www.mccsemi.com
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SI2304概述

N-Channel Enhancement Mode Field Effect Transistor

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
SI2304
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
30V,2.5A, R
DS(ON)
=65m¡@V
GS
=10V
30V,2.0A,
R
DS(ON)
=90m¡@V
GS
=4.5V
High dense cell design for extremely low R
DS(ON)
Rugged and reliable
Lead free product is acquired
SOT-23 Package
Marking Code: S4
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
C
B
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
DS
I
D
I
DM
V
GS
P
D
R
©
JA
T
J
T
STG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
30
2.5
10
f
20
0.25
500
-55 to +150
-55 to +150
Unit
V
A
A
V
W
/W
1
F
E
2. SOURCE
3. DRAIN
2
G
H
J
K
DIMENSIONS
Internal Block Diagram
D
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
G
.035
.900
.031
.800
S
.079
2.000
inches
mm
.037
.950
.037
.950
Revision:
A
www.mccsemi.com
1 of 5
2011/01/01

 
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