d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
www.vishay.com
1
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Si1488DH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 4.6 A
V
GS
= 2.5 V, I
D
= 4.3 A
V
GS
= 1.8 V, I
D
= 3.9 A
V
DS
= 10 V, I
D
= 4.6 A
Min.
20
Typ.
Max.
Unit
V
20.2
- 2.75
0.45
0.95
± 100
1
10
20
0.041
0.047
0.054
15
530
0.049
0.056
0.065
mV/°C
V
nA
µA
µA
A
Ω
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 5 V, I
D
= 4.6 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.6 A
f = 1 MHz
V
DD
= 10 V, R
L
= 2.7
Ω
I
D
≅
3.7 A, V
GEN
= 4.5 V, R
g
= 1
Ω
100
48
6.6
6
1.5
0.9
7.3
8.5
45
35
82
11
13
68
53
123
2.3
20
0.8
10.6
3.7
6.2
4.4
1.2
16
5.7
10
9
pF
pC
Ω
ns
T
C
= 25 °C
I
S
= 2.2 A
A
V
nC
ns
I
F
= 3.2 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
20
V
GS
= 5
V
thru 2.5
V
V
GS
= 2
V
15
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
4
5
3
10
V
GS
= 1.5
V
2
T
J
= 25 ° C
1
T
J
= 125 ° C
T
J
= - 55 ° C
0
0.0
5
V
GS
= 1
V
0
0.0
0.6
1.2
1.8
2.4
3.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.09
Transfer Characteristics Curves vs. Temperature
800
0.08
R
DS(on)
- On-Resistance (Ω)
600
0.07
V
GS
= 1.8
V
C - Capacitance (pF)
C
iss
0.06
V
GS
= 2.5
V
0.05
400
200
0.04
V
GS
= 4.5
V
0
0
4
8
12
16
20
0
C
rss
4
8
12
16
20
C
oss
0.03
I
D
- Drain Current (A)
V
DS
- Drain-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
I
D
= 4.6 A
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
4
R
DS(on)
- On-Resistance
(
N
ormalized)
V
DS
= 10
V
3
V
DS
= 16
V
2
1.6
1.8
Capacitance
1.4
V
GS
= 2.5
V,
I
D
= 4.3 A
V
GS
= 1.8
V,
I
D
= 3.9 A
1.2
V
GS
= 4.5
V,
I
D
= 4.6 A
1.0
1
0.8
0
0
2
4
6
8
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
www.vishay.com
3
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
20
10
R
DS(on)
- On-Resistance (
Ω)
0.12
I
D
= 4.6 A
0.09
I
S
- So
u
rce C
u
rrent (A)
1
T
J
= 150 °C
0.1
T
J
= 25 °C
0.06
T
A
= 125 ° C
T
A
= 25 ° C
0.03
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.0
30
25
I
D
= 250
µA
V
G S(th)
(
V
)
Po
w
er (W)
0.6
R
DS(on)
vs. V
GS
vs. Temperature
0.8
20
15
0.4
10
0.2
5
0.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
BVDSS Limited
0.01
T
A
= 25 ° C
Single Pulse
0.001
0.1
10
1
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
>
minimum
V
GS
at
which
R
DS(on)
is specified
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
8
3.5
2.8
Po
w
er Dissipation (
W
)
6
I
D
- Drain C
u
rrent (A)
Package Limited
4
2.1
1.4
2
0.7
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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