Si1433DH
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
- 30
0.260 @ V
GS
= - 4.5 V
- 1.6
r
DS(on)
(W)
0.150 @ V
GS
= - 10 V
I
D
(A)
- 2.2
D
TrenchFETr Power MOSFETS: 1.8-V Rated
D
Thermally Enhanced SC-70 Package
APPLICATIONS
D
Load Switches
- Notebook PCs
- Servers
SOT-363
SC-70 (6-LEADS)
D
1
6
D
Marking Code
BE
XX
YY
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1433DH-T1
D
2
5
D
G
3
4
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
- 1.4
1.45
0.75
- 55 to 150
- 1.7
-8
- 0.9
0.95
0.5
W
_C
- 1.4
A
Symbol
V
DS
V
GS
5 secs
Steady State
- 30
"20
Unit
V
- 2.2
- 1.9
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
65
105
38
Maximum
85
130
48
Unit
_C/W
C/W
1
Si1433DH
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 100
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= - 16 V, V
GS
= 0 V
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
= - 10 V, I
D
= - 2.2 A
V
GS
= - 4.5 V, I
D
= - 1.6 A
V
DS
= - 10 V, I
D
= - 2.2 A
I
S
= - 1.2 A, V
GS
= 0 V
-4
0.120
0.210
4
- 0.85
- 1.2
0.150
0.260
W
S
V
-1
-3
"100
-1
-5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 15
W
I
D
^
- 1 A, V
GEN
= - 10 V, R
G
= 6
W
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 2.2 A
3.1
1.0
1.6
11
17
18
13
17
26
27
20
ns
5
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
7
I D - Drain Current (A)
6
5
4V
4
3
2
1
3V
0
0
1
2
3
4
5
0
0
1
V
GS
= 10 thru 5 V
8
Transfer Characteristics
T
C
= - 55_C
7
25_C
I D - Drain Current (A)
6
5
125_C
4
3
2
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
Si1433DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.75
350
Vishay Siliconix
Capacitance
r DS(on)- On-Resistance (
W
)
0.60
C - Capacitance (pF)
280
C
iss
210
0.45
0.30
V
GS
= 4.5 V
0.15
V
GS
= 10 V
140
C
oss
70
C
rss
0.00
0
1
2
3
4
5
6
7
8
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 2.2 A
r DS(on)- On-Resistance (
W
)
(Normalized)
8
1.4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.2 A
V GS - Gate-to-Source Voltage (V)
6
1.2
4
1.0
2
0.8
0
0
1
2
3
4
5
6
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
0.70
On-Resistance vs. Gate-to-Source Voltage
r DS(on)- On-Resistance (
W
)
0.56
I
S
- Source Current (A)
T
J
= 150_C
1
0.42
I
D
= 2.2 A
0.28
T
J
= 25_C
0.14
0.1
0.00
0.3
0.6
0.9
1.2
1.5
0.00
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
3
Si1433DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
35
Single Pulse Power, Junction-to-Ambient
0.4
V GS(th) Variance (V)
28
0.2
I
D
= 250
mA
0.0
Power (W)
21
14
- 0.2
7
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
Safe Operating Area
10
Limited by
r
DS(on)
I
D
- Drain Current (A)
1
1 ms
10 ms
0.1
T
C
= 25_C
Single Pulse
100 ms
1s
10 s
dc
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 105_C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
Si1433DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
5
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