Si1303EDL
New Product
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.430 @ V
GS
= –4.5 V
–20
20
0.480 @ V
GS
= –3.6 V
0.700 @ V
GS
= –2.5 V
I
D
(A)
"0.72
"0.68
"0.56
SOT-323
SC-70 (3-LEADS)
G
1
Marking Code
3
D
LD
XX
YY
Lot Traceability
and Date Code
S
2
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
–0.28
0.34
0.22
–55 to 150
Symbol
V
DS
V
GS
5 secs
Steady State
–20
"12
Unit
V
"0.72
"0.58
"2.5
"0.67
"0.54
A
–0.24
0.29
W
0.19
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71094
S-99400—Rev. A, 29-Nov-99
www.siliconix.com
S
FaxBack 408-970-5600
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
315
360
285
Maximum
375
430
340
Unit
_C/W
1
Si1303DL
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= –20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –1 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –3.6 V, I
D
= –0.7 A
V
GS
= –2.5 V, I
D
= –0.3 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –10 V, I
D
= –1 A
I
S
= –1 A, V
GS
= 0 V
–2.5
0.360
0.400
0.560
1.7
–1.2
0.430
0.480
0.700
S
V
W
–0.6
"1
–1
–5
V
mA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
10 V,
I
D
^
–1 A, V
GEN
= –4.5 V R
G
= 6
W
1A
4 5 V,
V
DS
= –10 V V
GS
= –4.5 V, I
D
= –1 A
10 V,
45V
1
1.9
0.45
0.44
180
410
560
530
435
300
655
900
850
700
ns
2.5
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
6
V
GS
= 4.5 V
5
I
D
– Drain Current (A)
4V
3.5 V
5
I
D
– Drain Current (A)
6
Transfer Characteristics
T
C
= –55_C
25_C
4
4
3
3V
3
125_C
2
2.5 V
2V
2
1
1, 1.5 V
0
0
2
4
6
8
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
– Drain-to-Source Voltage (V)
www.siliconix.com
S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71094
Pending—Rev. A, 09-Nov-99
2
Si1303EDL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On Resistance vs. Drain Current
2.0
r
DS(on)
– On-Resistance (
W
)
250
Vishay Siliconix
Capacitance
V
GS
= 2.5 V
1.2
C – Capacitance (pF)
1.6
200
C
iss
150
0.8
V
GS
= 3.6 V
0.4
V
GS
= 4.5 V
100
C
oss
50
C
rss
0
0
1
2
3
4
5
6
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
12
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 1 A
9
1.6
On Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 1 A
1.2
6
r
DS(on)
– On-Resistance (
W)
(Normalized)
2
3
4
5
0.8
3
0.4
0
0
1
Q
g
– Total Gate Charge (nC)
0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source Drain Diode Forward Voltage
10
On Resistance vs. Gate to Source Voltage
2.5
I
S
– Source Current (A)
1
r
DS(on)
– On-Resistance (
W
)
T
J
= 150_C
2.0
1.5
I
D
= 1 A
0.1
T
J
= 25_C
0.01
1.0
0.5
0.001
0
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
0
0
1
2
3
4
5
6
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71094
Pending—Rev. A, 09-Nov-99
www.siliconix.com
S
FaxBack 408-970-5600
3
Si1303DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate Current vs. Gate Source Voltage
1600
4000
1000
100
10
I
G
(
m
A)
800
I
GSS
(mA) @ T = 25_C
400
1
0.1
0.01
I
G
(mA) @ 25_C
0.001
0
0
3
6
9
12
V
GS
– Gate-to-Source Voltage (v)
0.0001
0.1
1
V
GS
– Gate-to-Source Voltage (v)
10
20
I
G
(mA) @ 150_C
Gate-Source Voltage vs. Gate-Current
1200
I
GSS
(
m
A)
Threshold Voltage
0.4
20
Single Pulse Power
0.3
V
GS(th)
Variance (V)
I
D
= 250
mA
0.2
Power (W)
16
12
T
A
= 25_C
8
0.1
0.0
4
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
10
–3
10
–2
10
–1
1
10
100
600
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction to Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 360_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.siliconix.com
S
FaxBack 408-970-5600
4
Document Number: 71094
Pending—Rev. A, 09-Nov-99
Si1303EDL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction to Foot
2
1
Duty Cycle = 0.5
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71094
Pending—Rev. A, 09-Nov-99
www.siliconix.com
S
FaxBack 408-970-5600
5
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