CYStech Electronics Corp.
Dual N-Channel Logic Level Enhancement Mode MOSFET
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 1/9
MTB14A03V8
Description
BV
DSS
I
D
R
DSON(TYP)
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
30V
8.5A
11.2mΩ
16mΩ
The MTB14A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3
×
3 package,
providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost effectiveness.
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Dynamic dv/dt rating
•
Repetitive Avalanche Rated
•
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB14A03V8
Outline
DFN3×3
G：Gate
D：Drain S：Source
Pin 1
Ordering Information
Device
MTB14A03V8-0-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB14A03V8
CYStek Product Specification
CYStech Electronics Corp.
The following characteristics apply to each MOSFET.
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
A
=25°C
Continuous Drain Current @ V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Single device operation
Total Power Dissipation
Single device value at dual operation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 2/9
Limits
30
±20
8.5
6.8
40
*1
1.5
*2
1.24
*2
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Symbol
R
th,j-a
Value
84
*2
101
*2
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice R
th,j-a
will be determined by customer’s PCB characteristics.
216°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
1.7
9
-
-
-
11.2
16
1105
117
100
16
3.3
4
12
9
33
12
Max.
-
2.5
-
±
100
1
25
15
23
-
-
-
-
-
-
-
-
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=6A
V
GS
=
±
20V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, Tj=125°C
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
DS
=15V, V
GS
=0V, f=1MHz
Dynamic
Ciss
Coss
Crss
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
MTB14A03V8
pF
nC
V
DS
=15V, V
GS
=10V, I
D
=8.5A
ns
V
DS
=15V, I
D
=1A, V
GS
=10V, R
GS
=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
Typ.
-
-
0.74
55
6
Max.
2.3
9.2
1.2
-
-
Unit
A
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 3/9
Test Conditions
V
ns
nC
I
S
=2.3A, V
GS
=0V
I
F
=2.3A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB14A03V8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
40
35
I
D
, Drain Current (A)
30
25
20
15
10
5
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
V
GS
=3V
V
GS
=2V
10V,9V,8V,7V,6V,5V
V
GS
=4V
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 4/9
Brekdown Voltage vs Junction Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
0.8
0.6
0.4
0.2
Tj=25°C
100
V
GS
=3V
Tj=150°C
10
V
GS
=4.5V
V
GS
=10V
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
280
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
240
200
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=6A
2
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
R
DSON
@ Tj=25°C : 11.2 mΩ typ
V
GS
=10V, I
D
=6A
MTB14A03V8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
Capacitance---(pF)
Ciss
1000
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
V
DS
=5V
10
Gate Charge Characteristics
V
DS
=15V
V
GS
, Gate-Source Voltage(V)
10
8
V
DS
=10V
6
V
DS
=5V
1
V
GS
=10V
4
2
0.1
Ta=25°C
Pulsed
I
D
=8.5A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
Maximum Safe Operating Area
100
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
25
T
A
=25°C, V
GS
=10V, R
θJA
=84°C/W
I
D
, Drain Current(A)
10
100
μ
s
1ms
10ms
100ms
1s
DC
1
0.1
T
A
=25°C, Tj=150°C
V
GS
=10V, R
θ
JA
=84°C/W
Single Pulse
0.01
I
D
, Maximum Drain Current(A)
R
DSON
Limite
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTB14A03V8
CYStek Product Specification
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