M
AGNETIC
A
NGLE
S
ENSOR
KMT32B
Preliminary
Preliminary Data Sheet
KMT32B
HL PLANARTECHNIK GmbH
•
Hauert 13
•
44227 Dortmund
•
Germany
•
www.hlplanar.de
service@hlplanar.de
•
phone: +49-(0)231-97400
•
fax: +49-(0)231-974020
KMT32B_PreliminaryDataSheet (2007-01-12)-1.doc
Last update 19.01.07
M
AGNETIC
A
NGLE
S
ENSOR
KMT32B
Preliminary
FEATURES
•
•
•
•
•
•
•
•
•
•
Contactless angular position
Ideal for harsh environments due to
magnetic sensing
Factory optimized linearity
Low Cost
High Accuracy
High rotational speed up to 30,000
rpm
Extended operating temperature
range (-40 ° to +150 °
C
C)
Low Power
RoHS compliant (lead free)
SMD package
APPLICATIONS
•
•
•
•
•
•
•
Absolute and incremental angle
Angle Measurement
Motor motion control
Robotics
Camera positioning
Potentiometer replacement
Automotive
PACKAGES
SM8
SO8
TDFN
Die
General Description
The KMT32B is a magnetic field sensor based on the anisotropic
magnetoresistance effect. The sensor contains two parallel
supplied Wheatstone bridges, which enclose a sensitive angle of
45 degrees.
A rotating magnetic field in the surface parallel to the chip (x-y
plane) will deliver two independent sinusoidal output signals, one
following a cos(2α) and the second following a sin(2α) function,
α
being the angle between sensor and field direction (see Figure
1).
15
10
5
Uo/Ucc [mV/V]
KMT32B
0
0
-5
45
90
135
180
225
270
315
360
-Vo1
-Vo2
+Vcc2
GND1
GND2
+Vo2
+Vo1
-10
+Vcc1
-15
α
[de g]
bridge1 (sin)
bridge2 (cos)
Figure 1: Characteristic curves for KMT32B
HL PLANARTECHNIK GmbH
•
Hauert 13
•
44227 Dortmund
•
Germany
•
www.hlplanar.de
service@hlplanar.de
•
phone: +49-(0)231-97400
•
fax: +49-(0)231-974020
KMT32B_PreliminaryDataSheet (2007-01-12)-1.doc
Last update 19.01.07
M
AGNETIC
A
NGLE
S
ENSOR
KMT32B
Preliminary
The KMT32B magnetic field
sensor is suited for high precision
angle measurement applications
under
low
field
conditions
(regularly H
0
= 25 kA/m, with
reduced
accuracy
applicable
down to H
0
= 8 kA/m; beware of
earth’s magnetic field !).
Circuit Diagram
CHARACTERISTIC VALUES (PRELIMINARY)
P
ARAMETER
S
YMBOL
C
ONDITION
M
IN
T
YP
M
AX
U
NIT
A. Operating Limits
max. supply voltage
V
cc,max
10
4
@T= TBD °
C
-40
-25
TBD
+150
+150
V
mA
mW
°C
°C
max. current (single bridge)
I
cc,max
power dissipation
operating temperature
storage temperature
P
tot
T
op
T
st
B. Sensor Specifications (T=25 °
C)
Supply voltage
Resistance (single bridge)
Output signal range
Offset voltage
angular inaccuracy
angular hysteresis
V
cc
R
b
2400
Condition A, B
Condition A, B
Condition A, B
Condition A, B
17
-1
5
3000
20
0
0.05
+1
0.2
0.1
8.5
3600
V
Ω
mV/V
mV/V
deg
deg
∆
V/V
cc
V
off
∆α
∆α
H
C. Sensor Specifications
TC of amplitude
TC of resistance
TC of offset
TCSV
TCBR
TCVoff
Condition A, C
Condition A, C
Condition A, C
-0.36
+0.27
-4
-0.32
+0.32
0
-0.28
+0.37
+4
%/K
%/K
µV/V/K
Stress above one or more of the limiting values may cause permanent damage to the device. Exposure to limiting values for
extended periods may affect device reliability.
HL PLANARTECHNIK GmbH
•
Hauert 13
•
44227 Dortmund
•
Germany
•
www.hlplanar.de
service@hlplanar.de
•
phone: +49-(0)231-97400
•
fax: +49-(0)231-974020
KMT32B_PreliminaryDataSheet (2007-01-12)-1.doc
Last update 19.01.07
M
AGNETIC
A
NGLE
S
ENSOR
KMT32B
Preliminary
MEASUREMENT CONDITIONS
P
ARAMETER
S
YMBOL
U
NIT
C
ONDITION
A. Set Up Conditions
ambient temperature
supply voltage
applied magnetic field
T
V
cc
H
°
C
V
kA/m
T = 23±5 ° (unless otherwise noted)
C
Vcc=5 V
H=25 kA/m
B. Sensor Specifications (T=25 ° 360° turn , H=25 kA/m , Vo
max
>0, Vo
min
<0)
C,
signal amplitude
signal offset
angular hysteresis
angular inaccuracy
∆
V/V
Voff
mV/V
mV/V
deg
deg
∆V/V=Vo
max
- Vo
min
Voff=Vo
max
+ Vo
min
∆α
H
∆α
∆α
H
= MAX|
α
left turn
-
α
right turn
|
max. angular difference between left and right turn
∆α=
MAX|
α
0
-
α
|
max. angular difference between actual value
α
0
and
measured angle; offset voltage error contributions not
included
C. Sensor Specifications (T=-25° +125°
C,
C)
ambient temperatures
TC of amplitude
T
TCSV
°
C
%/K
T
1
=-25 ° T
0
=+25 ° T
2
=+125 °
C,
C,
C
∆
V
∆
V
(
T
2
)
−
(
T
1
)
1
V
V
TCV
=
⋅
⋅
100%
∆
V
(
T
2
−
T
1
)
(
T
1
)
V
TC of resistance
TCBR
%/K
TCR
=
TC of offset
TCVoff
µV/(VK)
R
(
T
2
)
−
R
(
T
1
)
1
⋅
⋅
100%
(
T
2
−
T
1
)
R
(
T
1
)
Voff
(
T
2
)
−
Voff
(
T
1
)
(
T
2
−
T
1
)
TCVoff
=
HL PLANARTECHNIK GmbH
•
Hauert 13
•
44227 Dortmund
•
Germany
•
www.hlplanar.de
service@hlplanar.de
•
phone: +49-(0)231-97400
•
fax: +49-(0)231-974020
KMT32B_PreliminaryDataSheet (2007-01-12)-1.doc
Last update 19.01.07
M
AGNETIC
A
NGLE
S
ENSOR
KMT32B
PACKAGES
Preliminary
SM8
SO8
HL PLANARTECHNIK GmbH
•
Hauert 13
•
44227 Dortmund
•
Germany
•
www.hlplanar.de
service@hlplanar.de
•
phone: +49-(0)231-97400
•
fax: +49-(0)231-974020
KMT32B_PreliminaryDataSheet (2007-01-12)-1.doc
Last update 19.01.07
NXP MCU
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