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FM24C16B-GTR

产品描述SPECIALTY MEMORY CIRCUIT, PDSO8
产品类别存储    存储   
文件大小221KB,共12页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM24C16B-GTR概述

SPECIALTY MEMORY CIRCUIT, PDSO8

专用存储器电路, PDSO8

FM24C16B-GTR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codeunknow
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度16384 bi
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数2048 words
字数代码2000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
电源5 V
认证状态Not Qualified
座面最大高度1.75 mm
最大待机电流0.00001 A
最大压摆率0.0004 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm

文档预览

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Preliminary
FM24C16B
16Kb Serial 5V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance (10
12
) Read/Write Cycles
38 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 1MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
5V operation
100
A
Active Current (100 kHz)
4
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM24C16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by EEPROM
and other nonvolatile memories.
The FM24C16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array in the cycle after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM24C16B is capable of
supporting 10
12
read/write cycles, or a million times
more write cycles than EEPROM.
These capabilities make the FM24C16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows the system to write
data more frequently, with less system overhead.
The FM24C16B provides substantial benefits to users
of serial EEPROM, and these benefits are available as
a hardware drop-in replacement. The FM24C16B is
available in an industry standard 8-pin SOIC package
and uses a familiar two-wire protocol. The
specifications are guaranteed over the industrial
temperature range from -40°C to +85°C.
Pin Configuration
NC
NC
NC
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Names
SDA
SCL
WP
VSS
VDD
Function
Serial Data/Address
Serial Clock
Write Protect
Ground
Supply Voltage
Ordering Information
FM24C16B-G
FM24C16B-GTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.3
July 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Page 1 of 12

FM24C16B-GTR相似产品对比

FM24C16B-GTR FM24C16B FM24C16B-G
描述 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
内存宽度 8 8 8
功能数量 1 1 1
端子数量 8 8 8
组织 2KX8 2K X 8 2KX8
表面贴装 YES Yes YES
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
是否Rohs认证 符合 - 符合
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) - Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 SOIC - SOIC
包装说明 SOP, SOP8,.25 - SOP, SOP8,.25
针数 8 - 8
Reach Compliance Code unknow - unknow
JESD-30 代码 R-PDSO-G8 - R-PDSO-G8
长度 4.9 mm - 4.9 mm
内存密度 16384 bi - 16384 bi
内存集成电路类型 MEMORY CIRCUIT - MEMORY CIRCUIT
字数 2048 words - 2048 words
字数代码 2000 - 2000
工作模式 SYNCHRONOUS - SYNCHRONOUS
最高工作温度 85 °C - 85 °C
最低工作温度 -40 °C - -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装代码 SOP - SOP
封装等效代码 SOP8,.25 - SOP8,.25
封装形状 RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE
电源 5 V - 5 V
认证状态 Not Qualified - Not Qualified
座面最大高度 1.75 mm - 1.75 mm
最大待机电流 0.00001 A - 0.00001 A
最大压摆率 0.0004 mA - 0.0004 mA
最大供电电压 (Vsup) 5.5 V - 5.5 V
最小供电电压 (Vsup) 4.5 V - 4.5 V
标称供电电压 (Vsup) 5 V - 5 V
技术 CMOS - CMOS
端子节距 1.27 mm - 1.27 mm
宽度 3.9 mm - 3.9 mm
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