DISCRETE SEMICONDUCTORS
DATA SHEET
BZX384 series
Voltage regulator diodes
Product data sheet
Supersedes data of 2003 Apr 01
2004 Mar 22
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 300 mW
•
Two tolerance series:
±2%
and approx.
±5%
•
Working voltage range: nominal 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
•
General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes encapsulated in a
very small SOD323 (SC-76) plastic SMD package.
The diodes are available in the normalized E24
±2%
(BZX384-B) and approx.
±5%
(BZX384-C) tolerance
range. The series consists of 37 types with nominal
working voltages from 2.4 to 75 V.
PINNING
PIN
1
2
BZX384 series
handbook, halfpage
1
Top view
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
;
;
DESCRIPTION
cathode
anode
2
MAM387
2004 Mar 22
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZX384 series
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX384-B2V4 to BZX384-B75
BZX384-B2V4
BZX384-B2V7
BZX384-B3V0
BZX384-B3V3
BZX384-B3V6
BZX384-B3V9
BZX384-B4V3
BZX384-B4V7
BZX384-B5V1
BZX384-B5V6
K1
K2
K3
K4
K5
K6
K7
K8
K9
L1
BZX384-B6V2
BZX384-B6V8
BZX384-B7V5
BZX384-B8V2
BZX384-B9V1
BZX384-B10
BZX384-B11
BZX384-B12
BZX384-B13
BZX384-B15
L2
L3
L4
L5
L6
L7
L8
L9
M1
M2
BZX384-B16
BZX384-B18
BZX384-B20
BZX384-B22
BZX384-B24
BZX384-B27
BZX384-B30
BZX384-B33
BZX384-B36
BZX384-B39
M3
M4
M5
M6
M7
M8
M9
N0
N1
N2
BZX384-B43
BZX384-B47
BZX384-B51
BZX384-B56
BZX384-B62
BZX384-B68
BZX384-B75
N3
N4
N5
N6
N7
N8
N9
Marking codes for BZX384-C2V4 to BZX384-C75
BZX384-C2V4
BZX384-C2V7
BZX384-C3V0
BZX384-C3V3
BZX384-C3V6
BZX384-C3V9
BZX384-C4V3
BZX384-C4V7
BZX384-C5V1
BZX384-C5V6
T3
T4
T5
T6
T7
T8
T9
T0
D5
D6
BZX384-C6V2
BZX384-C6V8
BZX384-C7V5
BZX384-C8V2
BZX384-C9V1
BZX384-C10
BZX384-C11
BZX384-C12
BZX384-C13
BZX384-C15
T1
D7
D8
D9
D0
T2
DA
DB
DC
DD
BZX384-C16
BZX384-C18
BZX384-C20
BZX384-C22
BZX384-C24
BZX384-C27
BZX384-C30
BZX384-C33
BZX384-C36
BZX384-C39
DE
DF
DG
DH
DJ
DK
DL
DM
DN
DP
BZX384-C43
BZX384-C47
BZX384-C51
BZX384-C56
BZX384-C62
BZX384-C68
BZX384-C75
DR
DS
DT
DU
DV
DW
DX
ORDERING INFORMATION
TYPE
NUMBER
BZX384-B2V4
to
BZX384-B75
BZX384-C2V4
to
BZX384-C75
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
2004 Mar 22
3
NXP Semiconductors
Product data sheet
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
ZSM
P
tot
T
stg
T
j
Note
1. Refer to SOD323 standard mounting conditions.
CHARACTERISTICS
Total BZX384-B and C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current;
BZX384-B/C2V4
BZX384-B/C2V7
BZX384-B/C3V0
BZX384-B/C3V3
BZX384-B/C3V6
BZX384-B/C3V9
BZX384-B/C4V3
BZX384-B/C4V7
BZX384-B/C5V1
BZX384-B/C5V6
BZX384-B/C6V2
BZX384-B/C6V8
BZX384-B/C7V5
BZX384-B/C8V2
BZX384-B/C9V1
BZX384-B/C10
BZX384-B/C11
BZX384-B/C12
BZX384-B/C13
BZX384-B/C15 to 75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
CONDITIONS
I
F
= 10 mA; see Fig.3
I
F
= 100 mA; see Fig.3
PARAMETER
continuous forward current
non-repetitive peak reverse current
non-repetitive peak reverse power
dissipation
total power dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
amb
= 25
°C;
prior to surge
t
p
= 100
μs;
square wave;
T
amb
= 25
°C;
prior to surge
T
amb
= 25
°C;
note 1
CONDITIONS
−
MIN.
BZX384 series
MAX.
250
A
UNIT
mA
see Tables 1 and 2
−
−
−65
−65
40
300
+150
+150
W
mW
°C
°C
MAX.
0.9
1.1
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
V
V
UNIT
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
2004 Mar 22
4
Table 1
Per type BZX384-B/C2V4 to
B/C24
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
Tol.
±5%
(C)
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
MAX.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
TEMPERATURE
COEFFICIENT S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 4 and 5)
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
MAX.
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
NON-REPETITIVE
PEAK REVERSE
CURRENT I
ZSM
(A)
at t
p
= 100
μs;
T
amb
= 25 °C
MAX.
2004 Mar 22
5
NXP Semiconductors
Voltage regulator diodes
BZX-
Bxxx
Cxxx
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
BZX384 series
2.0
1.5
1.5
1.5
1.25
1.25
Product data sheet
嵌入式系统
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