BYW82, BYW83, BYW84, BYW85, BYW86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLICATIONS
• Rectification, general purpose
PARTS TABLE
PART
BYW82
BYW83
BYW84
BYW85
BYW86
TYPE DIFFERENTIATION
V
R
= 200 V; I
FAV
= 3 A
V
R
= 400 V; I
FAV
= 3 A
V
R
= 600 V; I
FAV
= 3 A
V
R
= 800 V; I
FAV
= 3 A
V
R
= 1000 V; I
FAV
= 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYW82
BYW83
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYW84
BYW85
BYW86
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i
2
t-rating
Junction and storage temperature
range
t
p
= 20 μs, half sine wave, T
j
= 175 °C
I
(BR)R
= 1 A, T
j
= 175 °C
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
P
R
E
R
i
2
t
T
j
= T
stg
VALUE
200
400
600
800
1000
100
18
3
1000
20
40
- 55 to + 175
UNIT
V
V
V
V
V
A
A
A
W
mJ
A
2
s
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
25
70
UNIT
K/W
K/W
Document Number: 86051
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
161
BYW82, BYW83, BYW84, BYW85, BYW86
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100 μA, t
p
/T = 0.01, t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, dI/dt = 5 A/μs, V
R
= 50 V
l
F
= 1 A, dI/dt = 5 A/μs
SYMBOL
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
MIN.
-
-
-
-
-
-
-
-
TYP.
-
0.1
5
-
40
3.5
4.5
8
MAX
1
1
10
1600
60
5
7.5
12
UNIT
V
μA
μA
V
pF
μs
μs
μC
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
40
100
RthJA - Therm. Resist.
Junction/Ambient (K/W)
30
I
F
- Forward Current (A)
10
T
j
= 175 °C
1
T
j
= 25 °C
0.1
20
l
10
l
0.01
0
0
94 9563
T
L
= constant
5
10
15
20
25
30
0.001
0
16360
0.4
0.8
1.2
1.6
2.0
I - Lead Length (mm)
V
F
- Forward Voltage (V)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Forward Current vs. Forward Voltage
I
FAV
- Average Forward Current (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40
60 80 100 120 140 160 180
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sinewave
R
thJA
= 25 K/W
I = 10 mm
P
R
- Reverse Power Dissipation (mW)
350
V
R
= V
RRM
300
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
-Limit
at 80 % V
R
P
R
-Limit
at 100 % V
R
16361
T
amb
- Ambient Temperature (°C)
16363
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
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162
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86051
Rev. 1.7, 25-Aug-10
BYW82, BYW83, BYW84, BYW85, BYW86
Standard Avalanche Sinterglass
Diode
1000
100
Vishay Semiconductors
C
D
- Diode Capacitance (pF)
V
R
= V
RRM
f = 1 MHz
80
I
R
- Reverse Current (A)
100
60
40
10
20
1
25
16362
0
50
75
100
125
150
175
16364
0.1
1
10
100
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 5 - Reverse Current vs. Junction Temperature
Z
thp
- Thermal Resistance for Pulse Cond. (K/W)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
100
t
p
/T = 0.5
t
p
/T = 0.2
10
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
1
10
-4
94 9568
V
RRM
= 1000 V
R
thJA
= 70 K/W
T
amb
= 25°C
45 °C
t
p
/T = 0.01
70°C
100°C
60 °C
10
-3
10
-2
10
-1
10
0
10
1
10
-1
t
p
- Pulse Length (s)
10
0
10
1
I
FRM
- Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Document Number: 86051
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
163
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Document Number: 91000
Revision: 11-Mar-11
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