BTA312B-600D
3Q Hi-Com Triac
Rev. 02 — 30 November 2010
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT404 plastic package.
This "series D" triac balances the requirements of commutation performance and gate
sensitivity. The "very sensitive gate" "series D" is intended for interfacing with low power
drivers including microcontrollers.
1.2 Features and benefits
3Q technology for improved noise
immunity
Direct interfacing with low power
drivers and microcontrollers
Good immunity to false turn-on by
dV/dt
High commutation capability with very
sensitive gate
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
1.3 Applications
Electronic thermostats (heating and
cooling)
High power motor controls e.g.
washing machines and vacuum
cleaners
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive
peak on-state
current
RMS on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
mb
≤
101 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
Conditions
Min
-
-
Typ
-
-
Max Unit
600
95
V
A
I
T(RMS)
-
-
12
A
NXP Semiconductors
BTA312B-600D
3Q Hi-Com Triac
Quick reference data
…continued
Parameter
gate trigger
current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Min
-
-
-
Typ
-
-
-
Max Unit
5
5
5
mA
mA
mA
Table 1.
Symbol
I
GT
Static characteristics
2. Pinning information
Table 2.
Pin
1
2
3
mb
T1
T2
G
T2
Pinning information
Symbol Description
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
2
1
3
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA312B-600D
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
BTA312B-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
2 of 14
NXP Semiconductors
BTA312B-600D
3Q Hi-Com Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤
101 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
Max
600
12
95
105
45
100
2
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
50
I
T(RMS)
(A)
40
003aab687
15
I
T(RMS)
(A)
003aab686
10
30
20
5
10
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
mb
(°C)
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
Fig 2.
RMS on-state current as a function of mounting
base temperature; maximum values
BTA312B-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
3 of 14
NXP Semiconductors
BTA312B-600D
3Q Hi-Com Triac
16
P
tot
(W)
12
003aab690
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
Fig 3.
100
I
TSM
(A)
80
Total power dissipation as a function of RMS on-state current; maximum values
003aab680
60
40
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
20
0
1
10
10
2
number of cycles (n)
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA312B-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
4 of 14
NXP Semiconductors
BTA312B-600D
3Q Hi-Com Triac
10
3
I
TSM
(A)
(1)
003aab691
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
Fig 5.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312B-600D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
5 of 14
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