End of Life January-2018 - Alternative Device: 6N135, 6N136
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output, 110 °C Rated
FEATURES
NC
A
C
NC
i179081_3
1
2
3
4
8
7
6
5
C (V
CC
)
B (V
B
)
C (V
O
)
E (GND)
• Operating temperature from -55 °C to +110 °C
• Isolation test voltages: 5300 V
RMS
• TTL compatible
• High bit rates: 1 MBd
• Bandwidth 2 MHz
• Open-collector output
• External base wiring possible
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
i179081
V
D E
DESCRIPTION
The 6N1135 and 6N1136 are 110 °C rated optocouplers
with a GaAIAs infrared emitting diode, optically coupled with
an integrated photo detector which consists of a photo
diode and a high-speed transistor in a DIP-8 plastic
package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
AGENCY APPROVALS
• UL1577 (pending)
• DIN EN 60747-5-5 (VDE 0884) (pending)
• cUL (pending)
• CQC (pending)
ORDERING INFORMATION
DIP-8
Option 6
6
N
1
1
3
#
-
X
0
0
#
T
TAPE
AND
REEL
7.62 mm
10.16 mm
PART NUMBER
PACKAGE OPTION
Option 9
> 0.1 mm
AGENCY CERTIFIED/PACKAGE
UL
DIP-8
DIP-8, 400 mil, option 6
SMD-8, option 9
≥
7
6N1135
6N1135-X006
6N1135-X009T
CTR (%)
≥
19
6N1136
6N1136-X006
6N1136-X009T
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Peak forward current
Maximum surge forward current
Thermal resistance
Power dissipation
OUTPUT
Supply voltage
Output voltage
Emitter base voltage
Output current
Maximum Output current
Rev. 1.9, 13-Nov-12
V
CC
V
O
V
EBO
I
O
-0.5 to 15
-0.5 to 15
5
8
16
V
V
V
mA
mA
T
amb
= 70 °C
t = 1 ms, duty cycle 50 %
t
≤
1 μs, 300 pulses/s
V
R
I
F
I
FM
I
FSM
R
th
P
diss
5
25
50
1
700
45
V
mA
mA
A
K/W
mW
TEST CONDITION
SYMBOL
VALUE
UNIT
Document Number: 83909
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: 6N135, 6N136
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
I
B
T
amb
= 70 °C
P
diss
VALUE
5
300
100
UNIT
mA
K/W
mW
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
OUTPUT
Base current
Thermal resistance
Power dissipation
COUPLER
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, Nov. 74)
Storage temperature range
Ambient temperature range
Soldering temperature
(1)
Max.
≤
10 s, dip soldering
≥
0.5 mm from case bottom
t = 1 min
V
ISO
T
stg
T
amb
T
sld
5300
-55 to +150
-55 to +100
260
V
RMS
°C
°C
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Temperature coefficient,
forward voltage
OUTPUT
Logic low supply current
Logic high supply current
I
F
= 1.6 mA, V
O
= open,
V
CC
= 15 V
I
F
= 0 mA, V
O
= open,
V
CC
= 15 V
I
F
= 16 mA, V
CC
= 4.5 V,
I
O
= 1.1 mA,
I
F
= 16 mA, V
CC
= 4.5 V,
I
O
= 2.4 mA
I
F
= 0 mA, V
O
= V
CC
= 5.5 V
I
F
= 0 mA, V
O
= V
CC
= 15 V
f = 1 MHz
6N1135
6N1136
I
CCL
I
CCH
V
OL
V
OL
I
OH
I
OH
C
IO
-
-
-
-
-
-
-
150
0.01
0.1
0.1
3
0.01
0.6
-
1
0.4
0.4
500
1
-
μA
μA
V
V
nA
μA
pF
I
F
= 1.6 mA
I
R
= 10 μA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz
I
F
= 1.6 mA
V
F
V
BR
I
R
C
I
ΔV
F
/ΔT
A
-
5
-
-
-
1.6
-
0.5
125
- 1.7
1.9
-
10
-
-
V
V
μA
pF
mV/°C
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Output voltage, output low
Output current, output high
COUPLER
Capacitance (input to output)
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I
F
= 16 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
I
F
= 16 mA, V
O
= 0.5 V,
V
CC
= 4.5 V
PART
6N1135
6N1136
6N1135
6N1136
SYMBOL
CTR
CTR
CTR
CTR
MIN.
7
19
5
15
TYP.
16
35
-
-
MAX.
-
-
-
-
UNIT
%
%
%
%
Current transfer ratio
Rev. 1.9, 13-Nov-12
Document Number: 83909
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: 6N135, 6N136
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
High to low
Low to high
TEST CONDITION
I
F
= 16 mA, V
CC
= 5 V, R
L
= 4.1 kΩ
I
F
= 16 mA, V
CC
= 5 V, R
L
= 1.9 kΩ
I
F
= 16 mA, V
CC
= 5 V, R
L
= 4.1 kΩ
I
F
= 16 mA, V
CC
= 5 V, R
L
= 1.9 kΩ
PART
6N1135
6N1136
6N1135
6N1136
SYMBOL
t
PHL
t
PHL
t
PLH
t
PLH
MIN.
-
-
-
-
TYP.
0.3
0.2
0.3
0.2
MAX.
1.5
0.8
1.5
0.8
UNIT
μs
μs
μs
μs
Pulse generator
Z
O
= 50
Ω
t
r
,t
f
= 5 ns
duty cycle 10 %
t
≤
100 μs
I
F
t
1
I
F
2
I
F
monitor
8
7
6
5
R
L
5V
V
O
5V
1.5 V
t
3
100
Ω
ı
V
O
C
L
15 pF
V
OL
t
PHL
4
t
PLH
i6n135_01
Fig. 1 - Switching Times
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
High
Low
TEST CONDITION
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 4.1 kΩ
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 1.9 kΩ
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 4.1 kΩ
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 1.9 kΩ
PART
6N1135
6N1136
6N1135
6N1136
SYMBOL
|CM
H
|
|CM
H
|
|CM
L
|
|CM
L
|
MIN.
-
-
-
-
TYP.
1000
1000
1000
1000
MAX.
-
-
-
-
UNIT
V/μs
V/μs
V/μs
V/μs
V
CM
10 V
I
F
1
2
3
4
8
7
6
5
R
L
V
O
V
O
5V
A: I
F
= 0 mA
+V
CM
5V
10 %
0V
tr
tf
A
B
V
FF
90 %
t
90 %
10 %
Pulse generator
Z
O
= 50
Ω
t
r,t f
= 8 ns
V
O
t
V
OL
B: I
F
= 16 mA
t
i6n135_02
Fig. 2 - Common-Mode Interference Immunity
Rev. 1.9, 13-Nov-12
Document Number: 83909
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: 6N135, 6N136
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
Pollution degree (DIN VDE 0109)
Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
V
IOTM
V
IORM
Isolation resistance
P
SI
I
SI
T
SI
Creepage distance
Clearance distance
Insulation thickness
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
CTI
V
IOTM
V
IORM
R
IO
R
IO
P
SI
I
SI
T
SI
TEST CONDITION
According to IEC 68 part 1
SYMBOL
MIN.
-
-
175
8000
630
10
12
10
11
-
-
-
8
7
0.4
TYP.
55 / 110 / 21
2
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
399
-
-
-
-
500
300
175
-
-
-
V
V
Ω
Ω
mA
mW
°C
mm
mm
mm
UNIT
Note
• As per IEC 60747-5-5, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
2.3
2.1
V
F
- Forward Voltage (V)
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.01
17585
8
- 55 °C
I
C
- Collector Current (mA)
7
6
5
4
10 mA
3
2
1
0
0.0
17629
T
amb
= 25 C,
V
CC
= 5 V,
saturated
I
F
= 25 mA
20 mA
15 mA
25 °C
50 °C
110 °C
5 mA
1 mA
0.1
0.2
0.3
0.4
0.5
V
CE
- Collector Emitter Voltage (V)
0.10
1.00
10.00
100.00
I
F
- Forward Current (mA )
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 5 - Collector Current vs. Collector Emitter Voltage
12
11
10
9
8
7
6
5
4
3
2
1
0
I
CE0
- Collector Emitter Leakage Current (nA)
I
F
= 25 mA
20 mA
15 mA
10 mA
1000
100
V
CC
= V
CE
= 15 V
10
1
0.1
V
CC
= V
CE
= 5 V
I
C
- Collector Current (mA )
5 mA
T
amb
= 25 C,
V
CC
= 5 V, non-saturated
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V
CE
- Collector Emitter Voltage (V)
17586
0.01
- 55 - 35 - 15 5 25 45 65 85 105 125
17590
T
amb
- Ambient Temperature (°C)
Fig. 4 - Collector Current vs. Collector Emitter Voltage
Rev. 1.9, 13-Nov-12
Fig. 6 - Collector Emitter Dark Current vs. Ambient Temperature
Document Number: 83909
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
End of Life January-2018 - Alternative Device: 6N135, 6N136
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
2.0
1.8
CTR
Norm
- Normalized CTR
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Normalized to I
F
= 10 mA,
T
amb
= 25 C, V
CC
= 5 V
V
O
= 0.4 V, saturated
10 mA
5 mA
CTR
Norm
- Normalized CTR
I
F
= 1 mA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Normalized to I
F
= 10 mA,
T
amb
= 25 C, V
CC
= 5 V
V
O
= 5 V, non saturated
10 mA
I
F
= 1 mA
5 mA
17630
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
T
amb
- Ambient Temperature (°C)
17632
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
T
amb
- Ambient Temperature (°C)
Fig. 7 - Normalized Current Transfer Ratio vs.
Ambient Temperature
Fig. 10 - Normalized Current Transfer Ratio vs.
Ambient Temperature
2.50
2.25
CTR
Norm
- Normalized CTR
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
Normalized to I
F
= 16 mA,
T
amb
= 25 C, V
CC
= 5 V
V
O
= 0.4 V, saturated
16 mA
10 mA
5 mA
I
F
= 1 mA
CTR
Norm
- Normalized CTR
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
F
= 1 mA
5 mA
10 mA
16 mA
Normalized to I
F
= 16 mA,
T
amb
= 25 C, V
CC
= 5 V
V
O
= 5 V, non saturated
0.00
- 55 - 35 - 15 5 25 45 65 85 105 125
T
amb
- Ambient Temperature (°C)
17631
17633
0.0
- 55 - 35 - 15 5 25 45 65 85 105 125
T
amb
- Ambient Temperature (°C)
Fig. 8 - Normalized Current Transfer Ratio vs.
Ambient Temperature
Fig. 11 - Normalized Current Transfer Ratio vs.
Ambient Temperature
7
I
F
= 20 mA
I
C
- Collector Current (mA)
6
Normalized h
FE
5
4
3
2
1
1 mA
0
- 55 - 35 - 15 5 25 45 65 85 105 125
T
amb
- Ambient Temperature (°C)
V
CC
= 5 V,
V
O
= 0.4 V, saturated
2 mA
16 mA
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.10
17634
50 ºC
110 ºC
10 mA
25 ºC
0 ºC
- 55 ºC
Normalized to
I
B
= 20
μA,
T
amb
= 25 °C
V
O
= 5 V, non saturated
1.00
10.00
I
B
- Base Current (mA)
100.00
17587
Fig. 9 - Output Current vs. Temperature
Fig. 12 - Normalized h
FE
vs. Base Current
Rev. 1.9, 13-Nov-12
Document Number: 83909
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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